Citation: |
Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. Journal of Semiconductors, 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101
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Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. J. Semicond., 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101.
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Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing
DOI: 10.1088/1674-4926/42/1/010101
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References
[1] Sokolov A S, Abbas H, Abbas Y, et al. Towards engineering in memristors for emerging memory and neuromorphic computing: A review. J Semicond, 2021, 42(1), 013101 doi: 10.1088/1674-4926/42/1/013101[2] Yang X, Luo C, Tian X Y, et al. A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory. J Semicond, 2021, 42(1), 013102 doi: 10.1088/1674-4926/42/1/013102[3] Huang H Y, Ge C, Liu Z H, et al. Electrolyte-gated transistors for neuromorphic applications. J Semicond, 2021, 42(1), 013103 doi: 10.1088/1674-4926/42/1/013103[4] Chen J, Li J C, Li Y, et al. Multiply accumulate operations in memristor crossbar arrays for analog computing. J Semicond, 2021, 42(1), 013104 doi: 10.1088/1674-4926/42/1/013104[5] Liao F Y, Zhou F C, Chai Y, et al. Neuromorphic vision sensors: Principle, progress and perspectives. J Semicond, 2021, 42(1), 013105 doi: 10.1088/1674-4926/42/1/013105[6] Gong C R, Chen L, Liu W H, et al. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors. J Semicond, 2021, 42(1), 014101 doi: 10.1088/1674-4926/42/1/014101[7] Shi J J, Lin Y, Zeng T, et al. Voltage-dependent plasticity and image Boolean operations realized in a WO x-based memristive synapse. J Semicond, 2021, 42(1), 014102 doi: 10.1088/1674-4926/42/1/014102[8] Tao Y, Li X H, Wang Z Q, et al. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices. J Semicond, 2021, 42(1), 014103 doi: 10.1088/1674-4926/42/1/014103 -
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