Fig. 1.
SEM images of Cd1–xZnxS thin films prepared with different concentrations of cadmium sulfate.
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| Citation: |
Yuming Xue, Shipeng Zhang, Dianyou Song, Liming Zhang, Xinyu Wang, Lang Wang, Hang Sun. Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–xZnxS thin films[J]. Journal of Semiconductors, 2021, 42(11): 112101. doi: 10.1088/1674-4926/42/11/112101
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Y M Xue, S P Zhang, D Y Song, L M Zhang, X Y Wang, L Wang, H Sun, Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–xZnxS thin films[J]. J. Semicond., 2021, 42(11): 112101. doi: 10.1088/1674-4926/42/11/112101.
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Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–xZnxS thin films
DOI: 10.1088/1674-4926/42/11/112101
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Abstract
Cd1–xZnxS thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x) = 0.59x2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells. -
References
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