Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Yue Hao; Huaqiang Wu; Yuchao Yang; Qi Liu; Xiao Gong; Genquan Han; Ming Li

doi:10.1088/1674-4926/42/2/020101

J. Semicond. > 2021, Volume 42 > Issue 2 > 020101

EDITORIAL

Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Yue Hao^1,, Huaqiang Wu^2,, Yuchao Yang^3,, Qi Liu^4,, Xiao Gong^5,, Genquan Han^1, and Ming Li^6,

+ Author Affiliations

1. School of Microelectronics, Xidian University, Xi’an 710071, China
2. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
3. Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
4. Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China
5. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117546, Singapore
6. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Author Bio:

Yue Hao is currently a Professor of Microelectronics and Solid State Electronics with Xidian University, Xi’an, China. His current interests include wide and untra-wide bandgap materials and devices, advanced CMOS devices and technology, semiconductor device reliability physics and failure mechanism, and organic electronics. Prof. Hao is a senior member of IEEE and member of the Chinese Academy of Sciences.

Huaqiang Wu is presently the director of the department of microelectronics and nanoelectronics, and the director of the Institute of Microelectronics, Tsinghua University. Dr. Wu is also served as the deputy director of Beijing Innovation Center for Future Chips. Dr. Wu received his Ph.D. degree in electrical and computer engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he was a senior engineer in Spansion LLC, Sunnyvale, CA. He joined Tsinghua University in 2009. His research interests include emerging memory and neuromorphic computing technologies. Dr. Wu has published more than 100 technical papers and owns more than 90 US and China patents. Dr. Wu’s papers have appeared on Nature, Nature Nanotechnology, Proceedings of the IEEE, IEEE EDL, ISSCC, IEDM, VLSI, etc.

Yuchao Yang received his PhD from Tsinghua University. He is now an Assistant Professor in Department of Micro/nanoelectronics and serves as Director of Center for Brain Inspired Chips at Peking University. His research interests include memristors, neuromorphic computing, and in-memory computing.

Qi Liu got his PhD degrees in microelectronics and solid-state electronics from the Anhui University in 2010. Now, he is a professor of Fudan University. Currently, his research interests focus on the fabrication, characterization and mechanism of the emerging memristor devices for nonvolatile memory, logic circuit and neuromorphic computing applications.

Xiao Gong is currently an Assistant Professor in the ECE Department of the National University of Singapore (NUS). He obtained his Ph. D Degree from NUS. He was also a Visiting Scientist at MIT in the year of 2014. His research interest includes advanced transistors for extremely low power logic and high frequency RF applications, emerging memories, circuits, and architectures for in-memory computing, single-photon avalanche diode for quantum technology, as well as 3D integration of hybrid devices for 5G/6G and opto-electronic integrated circuits.

Genquan Han received the B. Eng degree from Tsinghua University, Beijing, in 2003, and the Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, in 2008. He was a research fellow in National University of Singapore, from 2008 to 2013. In 2013, he joined College of Optoelectronic Engineering, Chongqing University. He is currently a Professor with the School of Microelectronics, Xidian University. His current research interests include high-mobility non-silicon MOSFETs, steep-slope field-effect transistors, novel non-volatile field-effect transistors, and Ga₂O₃ power devices. He is currently serving as an Editor for IEEE Electron Device Letters.

Ming Li Professor of the Institute of Semiconductors (IoS), CAS. He graduated from Shizuoka University in 2009. From 2009 to 2013, he engaged in postdoctoral research in the University of Ottawa and the INRS-EMT in Canada, and joined the IoS-CAS in 2013. He has been supported by the National Overseas High-level Youth Talent Program and the Excellent/Distinguished Young Scientist Foundation of NSFC. His research interests are mainly focused on optoelectronics and microwave photonics.

Corresponding author: Yue Hao, yhao@xidian.edu.cn; Huaqiang Wu, wuhq@tsinghua.edu.cn; Yuchao Yang, yuchaoyang@pku.edu.cn; Qi Liu, liuqi@ime.ac.cn; Xiao Gong, elegong@nus.edu.sg; Genquan Han, gqhan@xidian.edu.cn; Ming Li, ml@semi.ac.cn

DOI: 10.1088/1674-4926/42/2/020101

References

[1]	Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
[2]	Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
[3]	Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
[4]	Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
[5]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
[6]	Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
[7]	Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
[8]	Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
[9]	Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
[10]	Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103

[1]	Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
[2]	Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
[3]	Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
[4]	Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
[5]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
[6]	Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
[7]	Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
[8]	Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
[9]	Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
[10]	Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103

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Received: 31 January 2021 Revised: Online: Accepted Manuscript: 02 February 2021Uncorrected proof: 03 February 2021Published: 08 February 2021

Article Navigation > Journal of Semiconductors > 2021 > 42(2): 020101

Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. Journal of Semiconductors, 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101 ****Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. J. Semicond., 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101.

Citation:

Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. Journal of Semiconductors, 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101 ****

Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. J. Semicond., 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101.

Citation:

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Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

DOI: 10.1088/1674-4926/42/2/020101

1.
School of Microelectronics, Xidian University, Xi’an 710071, China
2.
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
3.
Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
4.
Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China
5.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117546, Singapore
6.
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

More Information

Yue Hao：is currently a Professor of Microelectronics and Solid State Electronics with Xidian University, Xi’an, China. His current interests include wide and untra-wide bandgap materials and devices, advanced CMOS devices and technology, semiconductor device reliability physics and failure mechanism, and organic electronics. Prof. Hao is a senior member of IEEE and member of the Chinese Academy of Sciences
Huaqiang Wu：is presently the director of the department of microelectronics and nanoelectronics, and the director of the Institute of Microelectronics, Tsinghua University. Dr. Wu is also served as the deputy director of Beijing Innovation Center for Future Chips. Dr. Wu received his Ph.D. degree in electrical and computer engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he was a senior engineer in Spansion LLC, Sunnyvale, CA. He joined Tsinghua University in 2009. His research interests include emerging memory and neuromorphic computing technologies. Dr. Wu has published more than 100 technical papers and owns more than 90 US and China patents. Dr. Wu’s papers have appeared on Nature, Nature Nanotechnology, Proceedings of the IEEE, IEEE EDL, ISSCC, IEDM, VLSI, etc
Yuchao Yang：received his PhD from Tsinghua University. He is now an Assistant Professor in Department of Micro/nanoelectronics and serves as Director of Center for Brain Inspired Chips at Peking University. His research interests include memristors, neuromorphic computing, and in-memory computing
Qi Liu：got his PhD degrees in microelectronics and solid-state electronics from the Anhui University in 2010. Now, he is a professor of Fudan University. Currently, his research interests focus on the fabrication, characterization and mechanism of the emerging memristor devices for nonvolatile memory, logic circuit and neuromorphic computing applications
Xiao Gong：is currently an Assistant Professor in the ECE Department of the National University of Singapore (NUS). He obtained his Ph. D Degree from NUS. He was also a Visiting Scientist at MIT in the year of 2014. His research interest includes advanced transistors for extremely low power logic and high frequency RF applications, emerging memories, circuits, and architectures for in-memory computing, single-photon avalanche diode for quantum technology, as well as 3D integration of hybrid devices for 5G/6G and opto-electronic integrated circuits
Genquan Han：received the B. Eng degree from Tsinghua University, Beijing, in 2003, and the Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, in 2008. He was a research fellow in National University of Singapore, from 2008 to 2013. In 2013, he joined College of Optoelectronic Engineering, Chongqing University. He is currently a Professor with the School of Microelectronics, Xidian University. His current research interests include high-mobility non-silicon MOSFETs, steep-slope field-effect transistors, novel non-volatile field-effect transistors, and Ga₂O₃ power devices. He is currently serving as an Editor for IEEE Electron Device Letters
Ming Li：Professor of the Institute of Semiconductors (IoS), CAS. He graduated from Shizuoka University in 2009. From 2009 to 2013, he engaged in postdoctoral research in the University of Ottawa and the INRS-EMT in Canada, and joined the IoS-CAS in 2013. He has been supported by the National Overseas High-level Youth Talent Program and the Excellent/Distinguished Young Scientist Foundation of NSFC. His research interests are mainly focused on optoelectronics and microwave photonics
Corresponding author: yhao@xidian.edu.cn; wuhq@tsinghua.edu.cn; yuchaoyang@pku.edu.cn; liuqi@ime.ac.cn; elegong@nus.edu.sg; gqhan@xidian.edu.cn; ml@semi.ac.cn
Received Date: 2021-01-31
Published Date: 2021-02-10

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References

[1]	Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
[2]	Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
[3]	Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
[4]	Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
[5]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
[6]	Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
[7]	Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
[8]	Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
[9]	Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
[10]	Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103

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