Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Hongrui Lv; Xianglong Shi; Yujie Ai; Zhe Liu; Defeng Lin; Lifang Jia; Zhe Cheng; Jie Yang; Yun Zhang

doi:10.1088/1674-4926/43/11/114101

J. Semicond. > 2022, Volume 43 > Issue 11 > 114101

ARTICLES

Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Hongrui Lv^{1, 2}, Xianglong Shi³, Yujie Ai^{1, 2,}, Zhe Liu¹, Defeng Lin^{1, 4}, Lifang Jia¹, Zhe Cheng¹, Jie Yang¹ and Yun Zhang^{1, 2,}

+ Author Affiliations

Corresponding author: Yujie Ai, aiyujie@semi.ac.cn; Yun Zhang, yzhang34@semi.ac.cn

DOI: 10.1088/1674-4926/43/11/114101

Abstract: Surface acoustic wave (SAW) resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN. The impact of device parameters including aspect ratio of length to width of resonators, number of interdigital transducers, and acoustic propagation direction on resonator performance have been studied. For the first time, we demonstrate wireless temperature sensing from 21.6 to 120 °C with a stable temperature coefficient of frequency of –24.3 ppm/°C on bulk GaN-based SAW resonators.

Key words: surface acoustic wave, resonator, gallium nitride, quality factor, temperature sensor

References

[1]	Wang W, Xue X, Fan S, et al. Development of a wireless and passive temperature-compensated SAW strain sensor. Sens Actuators A, 2020, 308, 112015 doi: 10.1016/j.sna.2020.112015
[2]	Li B, Yassine O, Kosel J. A surface acoustic wave passive and wireless sensor for magnetic fields, temperature, and humidity. IEEE Sensors J, 2014, 15(1), 453 doi: 10.1109/JSEN.2014.2335058
[3]	Bao X Q, Burkhard W, Varadan V V. et al. SAW Temperature sensor and remote reading system. IEEE 1987 Ultrasonics Symposium, 1987, 583 doi: 10.1109/ULTSYM.1987.199024
[4]	Avramov I D, Suohai M. Surface transverse waves exceed the material Q limit for surface acoustic waves on quartz. IEEE Trans Ultrason, Ferroelectrics, Frequency Control, 1996, 43(6), 1133 doi: 10.1109/58.542057
[5]	Ballandras S, Lardat R, Penavaire L, et al. P1i-5 micro-machined, all quartz package, passive wireless saw pressure and temperature sensor. 2006 IEEE Ultrasonics Symposium, 2006, 1441 doi: 10.1109/ULTSYM.2006.363
[6]	Hornsteiner J, Born E, Fischerauer G, et al. Surface acoustic wave sensors for high-temperature applications. Proceedings of the 1998 IEEE International Frequency Control Symposium, 1998, 615 doi: 10.1109/FREQ.1998.717964
[7]	Hassan A, Savaria Y, Sawan M. GaN integration technology, an ideal candidate for high-temperature applications: A review. IEEE Access, 2018, 6, 78790 doi: 10.1109/ACCESS.2018.2885285
[8]	Müller A, Konstantinidis G, Buiculescu V, et al. GaN/Si based single SAW resonator temperature sensor operating in the GHz frequency range. Sens Actuators A, 2014, 209, 115 doi: 10.1016/j.sna.2014.01.028
[9]	Qamar A, Eisner S R, Senesky D G, et al. Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings. J Microelectromechan Syst, 2020, 29(5), 900 doi: 10.1109/JMEMS.2020.2999040
[10]	Son K, Liao A, Lung G, et al. GaN-based high temperature and radiation-hard electronics for harsh environments. Nanosci Nanotechnol Lett, 2010, 2(2), 89 doi: 10.1166/nnl.2010.1063
[11]	Bartoli F, Aubert T, Moutaouekkil M, et al. AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices. Sens Actuators A, 2018, 283, 9 doi: 10.1016/j.sna.2018.08.011
[12]	Müller A, Konstantinidis G, Giangu I, et al. GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors. 2014 IEEE MTT-S International Microwave Symposium, 2014, 1 doi: 10.1109/MWSYM.2014.6848483
[13]	Müller A, Konstantinidis G, Stefanescu A, et al. Pressure and temperature determination with micromachined GAN/SI SAW based resonators operating in the GHZ frequency range. 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems, 2017, 1073 doi: 10.1109/TRANSDUCERS.2017.7994238
[14]	Ji X, Dong W X, Zhang Y M, et al. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates. Chin Phys B, 2019, 28(6), 067701 doi: 10.1088/1674-1056/28/6/067701
[15]	Kushvaha S S, Kumar M S, Maurya K K, et al. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target. AIP Adv, 2013, 3(9), 092109 doi: 10.1063/1.4821276
[16]	Li Q, Qian L, Fu S, et al. Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure. J Phys D, 2018, 51(14), 145305 doi: 10.1088/1361-6463/aab2c4
[17]	Zou J. High quality factor Lamb wave resonators. EECS Department University of California, Berkeley Technical Report No. UCB/EECS-2014-217, 2014
[18]	Lv H R, Huang Y L, Ai Y J, et al. An experimental and theoretical study of impact of device parameters on performance of AlN/sapphire-based SAW temperature sensors. Micromachines, 2021, 13(1), 40 doi: 10.3390/mi13010040
[19]	Elmazria O, Aubert T. Wireless SAW sensor for high temperature applications: Material point of view. In: Smart Sensors, Actuators, and MEMS V. SPIE, 2011, 8066, 19 doi: 10.1117/12.889165
[20]	Dong W, Ji X, Huang J, et al. Sensitivity enhanced temperature sensor: one-port 2D surface phononic crystal resonator based on AlN/sapphire. Semicond Sci Technol, 2019, 34, 055005 doi: 10.1088/1361-6641/ab0a82

Fig. 1. (Color online) (a) Schematic picture of SAW resonators. (b) SEM image of IDT fingers.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) 2θ–ω XRD scan patterns of bulk GaN. XRD rocking curves of bulk GaN along (b) [0002]_GaN and (c) [$10\bar{1}2$]_GaN. (d) AFM image of bulk GaN in a range of 10 × 10 µm².

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Frequency response (a) S₁₁ and (b) S₂₁ of the resonator, respectively. (c) Magnitude and (d) phase of input admittance of the resonator versus frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Schematic diagram of the SAW wireless temperature sensor. (b) Setup of GaN-based SAW wireless temperature sensing system. (c) RF power distribution in the frequency domain received by the transceiver from the resonator at 120 °C. (d) Temperature dependency of f_r of GaN-based SAW wireless sensor during heating and cooling, respectively. (e) Admittance magnitude |Y₁₁| of SAW sensors versus frequency with various temperatures from 23 to 100 °C.

DownLoad: Full-Size Img PowerPoint

Table 1. The performance of SAW resonators with different device parameters.

Sample	N_IDT	W	L/W	Direction	$ {Q}_{\mathrm{r}\_\mathrm{p}\mathrm{h}\mathrm{a}\mathrm{s}\mathrm{e}} $	$ {Q}_{\mathrm{a}\_\mathrm{p}\mathrm{h}\mathrm{a}\mathrm{s}\mathrm{e}} $	$ {K}_{\mathrm{t}}^{2} $ (%)
A	180	30λ	6	m	4829	6775	1.06
B	90	60λ	3/2	m	2825	2039	1.02
C	60	90λ	2/3	m	1883	532	0.86
D	45	120λ	3/8	m	808	423	0.72
E	90	30λ	3	m	2868	2269	0.83
F	360	30λ	12	m	3500	5690	0.75
G	180	30λ	6	a	1216	1764	0.39

DownLoad: CSV

[1]	Wang W, Xue X, Fan S, et al. Development of a wireless and passive temperature-compensated SAW strain sensor. Sens Actuators A, 2020, 308, 112015 doi: 10.1016/j.sna.2020.112015
[2]	Li B, Yassine O, Kosel J. A surface acoustic wave passive and wireless sensor for magnetic fields, temperature, and humidity. IEEE Sensors J, 2014, 15(1), 453 doi: 10.1109/JSEN.2014.2335058
[3]	Bao X Q, Burkhard W, Varadan V V. et al. SAW Temperature sensor and remote reading system. IEEE 1987 Ultrasonics Symposium, 1987, 583 doi: 10.1109/ULTSYM.1987.199024
[4]	Avramov I D, Suohai M. Surface transverse waves exceed the material Q limit for surface acoustic waves on quartz. IEEE Trans Ultrason, Ferroelectrics, Frequency Control, 1996, 43(6), 1133 doi: 10.1109/58.542057
[5]	Ballandras S, Lardat R, Penavaire L, et al. P1i-5 micro-machined, all quartz package, passive wireless saw pressure and temperature sensor. 2006 IEEE Ultrasonics Symposium, 2006, 1441 doi: 10.1109/ULTSYM.2006.363
[6]	Hornsteiner J, Born E, Fischerauer G, et al. Surface acoustic wave sensors for high-temperature applications. Proceedings of the 1998 IEEE International Frequency Control Symposium, 1998, 615 doi: 10.1109/FREQ.1998.717964
[7]	Hassan A, Savaria Y, Sawan M. GaN integration technology, an ideal candidate for high-temperature applications: A review. IEEE Access, 2018, 6, 78790 doi: 10.1109/ACCESS.2018.2885285
[8]	Müller A, Konstantinidis G, Buiculescu V, et al. GaN/Si based single SAW resonator temperature sensor operating in the GHz frequency range. Sens Actuators A, 2014, 209, 115 doi: 10.1016/j.sna.2014.01.028
[9]	Qamar A, Eisner S R, Senesky D G, et al. Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings. J Microelectromechan Syst, 2020, 29(5), 900 doi: 10.1109/JMEMS.2020.2999040
[10]	Son K, Liao A, Lung G, et al. GaN-based high temperature and radiation-hard electronics for harsh environments. Nanosci Nanotechnol Lett, 2010, 2(2), 89 doi: 10.1166/nnl.2010.1063
[11]	Bartoli F, Aubert T, Moutaouekkil M, et al. AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices. Sens Actuators A, 2018, 283, 9 doi: 10.1016/j.sna.2018.08.011
[12]	Müller A, Konstantinidis G, Giangu I, et al. GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors. 2014 IEEE MTT-S International Microwave Symposium, 2014, 1 doi: 10.1109/MWSYM.2014.6848483
[13]	Müller A, Konstantinidis G, Stefanescu A, et al. Pressure and temperature determination with micromachined GAN/SI SAW based resonators operating in the GHZ frequency range. 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems, 2017, 1073 doi: 10.1109/TRANSDUCERS.2017.7994238
[14]	Ji X, Dong W X, Zhang Y M, et al. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates. Chin Phys B, 2019, 28(6), 067701 doi: 10.1088/1674-1056/28/6/067701
[15]	Kushvaha S S, Kumar M S, Maurya K K, et al. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target. AIP Adv, 2013, 3(9), 092109 doi: 10.1063/1.4821276
[16]	Li Q, Qian L, Fu S, et al. Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure. J Phys D, 2018, 51(14), 145305 doi: 10.1088/1361-6463/aab2c4
[17]	Zou J. High quality factor Lamb wave resonators. EECS Department University of California, Berkeley Technical Report No. UCB/EECS-2014-217, 2014
[18]	Lv H R, Huang Y L, Ai Y J, et al. An experimental and theoretical study of impact of device parameters on performance of AlN/sapphire-based SAW temperature sensors. Micromachines, 2021, 13(1), 40 doi: 10.3390/mi13010040
[19]	Elmazria O, Aubert T. Wireless SAW sensor for high temperature applications: Material point of view. In: Smart Sensors, Actuators, and MEMS V. SPIE, 2011, 8066, 19 doi: 10.1117/12.889165
[20]	Dong W, Ji X, Huang J, et al. Sensitivity enhanced temperature sensor: one-port 2D surface phononic crystal resonator based on AlN/sapphire. Semicond Sci Technol, 2019, 34, 055005 doi: 10.1088/1361-6641/ab0a82

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Received: 18 April 2022 Revised: 15 May 2022 Online: Accepted Manuscript: 02 August 2022Uncorrected proof: 03 August 2022Published: 01 November 2022

Article Navigation > Journal of Semiconductors > 2022 > 43(11): 114101

Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J]. Journal of Semiconductors, 2022, 43(11): 114101. doi: 10.1088/1674-4926/43/11/114101 ****Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. 2022: Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor. Journal of Semiconductors, 43(11): 114101. doi: 10.1088/1674-4926/43/11/114101

Citation:

Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. 2022: Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor. Journal of Semiconductors, 43(11): 114101. doi: 10.1088/1674-4926/43/11/114101

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Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

DOI: 10.1088/1674-4926/43/11/114101

Hongrui Lv^{1, 2},
Xianglong Shi³,
Yujie Ai^{1, 2,},
Zhe Liu¹,
Defeng Lin^{1, 4},
Lifang Jia¹,
Zhe Cheng¹,
Jie Yang¹,
Yun Zhang^{1, 2,}

1.
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Beijing Aerospace Micro-electronics Technology Co., Beijing 100854, China
4.
Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China

More Information

Hongrui Lv：got his BS from Shandong University in 2015. Now he is a PhD student at Institute of Semiconductors, University of Chinese Academy of Sciences under the supervision of Prof. Yujie Ai. His research focuses on nitride-based surface acoustic wave (SAW) wireless temperature sensors
Yujie Ai：got his BS degree in 2004 at Shandong Normal University and PhD degree in 2011 at Peiking University. He joined Institute of Semiconductors, Chinese Academy of Sciences as a full professor.His research interests include acoustic filters and sensors
Yun Zhang：got his BS degree in 2005 at Tsinghua University and Ph.D. degree in 2011 at Georgia Institute of Technology. He joined Institute of Semiconductors, Chinese Academy of Sciences as a full researcher. His research interests are wide-bandgap semiconductor materials and devices including UV optoelectronic devices, RF devices, power electronic devices and related integrated circuits
Corresponding author: aiyujie@semi.ac.cn; yzhang34@semi.ac.cn
Received Date: 2022-04-18
Revised Date: 2022-05-15

Available Online: 2022-08-02

Abstract

Abstract

Surface acoustic wave (SAW) resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN. The impact of device parameters including aspect ratio of length to width of resonators, number of interdigital transducers, and acoustic propagation direction on resonator performance have been studied. For the first time, we demonstrate wireless temperature sensing from 21.6 to 120 °C with a stable temperature coefficient of frequency of –24.3 ppm/°C on bulk GaN-based SAW resonators.
- surface acoustic wave,
- resonator,
- gallium nitride,
- quality factor,
- temperature sensor

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References

[1]	Wang W, Xue X, Fan S, et al. Development of a wireless and passive temperature-compensated SAW strain sensor. Sens Actuators A, 2020, 308, 112015 doi: 10.1016/j.sna.2020.112015
[2]	Li B, Yassine O, Kosel J. A surface acoustic wave passive and wireless sensor for magnetic fields, temperature, and humidity. IEEE Sensors J, 2014, 15(1), 453 doi: 10.1109/JSEN.2014.2335058
[3]	Bao X Q, Burkhard W, Varadan V V. et al. SAW Temperature sensor and remote reading system. IEEE 1987 Ultrasonics Symposium, 1987, 583 doi: 10.1109/ULTSYM.1987.199024
[4]	Avramov I D, Suohai M. Surface transverse waves exceed the material Q limit for surface acoustic waves on quartz. IEEE Trans Ultrason, Ferroelectrics, Frequency Control, 1996, 43(6), 1133 doi: 10.1109/58.542057
[5]	Ballandras S, Lardat R, Penavaire L, et al. P1i-5 micro-machined, all quartz package, passive wireless saw pressure and temperature sensor. 2006 IEEE Ultrasonics Symposium, 2006, 1441 doi: 10.1109/ULTSYM.2006.363
[6]	Hornsteiner J, Born E, Fischerauer G, et al. Surface acoustic wave sensors for high-temperature applications. Proceedings of the 1998 IEEE International Frequency Control Symposium, 1998, 615 doi: 10.1109/FREQ.1998.717964
[7]	Hassan A, Savaria Y, Sawan M. GaN integration technology, an ideal candidate for high-temperature applications: A review. IEEE Access, 2018, 6, 78790 doi: 10.1109/ACCESS.2018.2885285
[8]	Müller A, Konstantinidis G, Buiculescu V, et al. GaN/Si based single SAW resonator temperature sensor operating in the GHz frequency range. Sens Actuators A, 2014, 209, 115 doi: 10.1016/j.sna.2014.01.028
[9]	Qamar A, Eisner S R, Senesky D G, et al. Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings. J Microelectromechan Syst, 2020, 29(5), 900 doi: 10.1109/JMEMS.2020.2999040
[10]	Son K, Liao A, Lung G, et al. GaN-based high temperature and radiation-hard electronics for harsh environments. Nanosci Nanotechnol Lett, 2010, 2(2), 89 doi: 10.1166/nnl.2010.1063
[11]	Bartoli F, Aubert T, Moutaouekkil M, et al. AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices. Sens Actuators A, 2018, 283, 9 doi: 10.1016/j.sna.2018.08.011
[12]	Müller A, Konstantinidis G, Giangu I, et al. GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors. 2014 IEEE MTT-S International Microwave Symposium, 2014, 1 doi: 10.1109/MWSYM.2014.6848483
[13]	Müller A, Konstantinidis G, Stefanescu A, et al. Pressure and temperature determination with micromachined GAN/SI SAW based resonators operating in the GHZ frequency range. 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems, 2017, 1073 doi: 10.1109/TRANSDUCERS.2017.7994238
[14]	Ji X, Dong W X, Zhang Y M, et al. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates. Chin Phys B, 2019, 28(6), 067701 doi: 10.1088/1674-1056/28/6/067701
[15]	Kushvaha S S, Kumar M S, Maurya K K, et al. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target. AIP Adv, 2013, 3(9), 092109 doi: 10.1063/1.4821276
[16]	Li Q, Qian L, Fu S, et al. Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure. J Phys D, 2018, 51(14), 145305 doi: 10.1088/1361-6463/aab2c4
[17]	Zou J. High quality factor Lamb wave resonators. EECS Department University of California, Berkeley Technical Report No. UCB/EECS-2014-217, 2014
[18]	Lv H R, Huang Y L, Ai Y J, et al. An experimental and theoretical study of impact of device parameters on performance of AlN/sapphire-based SAW temperature sensors. Micromachines, 2021, 13(1), 40 doi: 10.3390/mi13010040
[19]	Elmazria O, Aubert T. Wireless SAW sensor for high temperature applications: Material point of view. In: Smart Sensors, Actuators, and MEMS V. SPIE, 2011, 8066, 19 doi: 10.1117/12.889165
[20]	Dong W, Ji X, Huang J, et al. Sensitivity enhanced temperature sensor: one-port 2D surface phononic crystal resonator based on AlN/sapphire. Semicond Sci Technol, 2019, 34, 055005 doi: 10.1088/1361-6641/ab0a82

Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

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