Citation: |
Yafeng Deng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan, Dong Wang. Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor[J]. Journal of Semiconductors, 2022, 43(5): 052003. doi: 10.1088/1674-4926/43/5/052003
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Y F Deng, Y X Li, P F Wang, S Wang, X Pan, D Wang. Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor[J]. J. Semicond, 2022, 43(5): 052003. doi: 10.1088/1674-4926/43/5/052003
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Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor
DOI: 10.1088/1674-4926/43/5/052003
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Abstract
With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >103 and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications. -
References
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