J. Semicond. > 2023, Volume 44 > Issue 11 > 112301

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Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect

Yunshan Zhang1, Yifan Xu1, Shijian Guan2, Jilin Zheng3, Hongming Gu1, Lianyan Li1, Rulei Xiao2, Tao Fang2, Hui Zou1 and Xiangfei Chen2,

+ Author Affiliations

 Corresponding author: Xiangfei Chen, chenxf@nju.edu.cn

DOI: 10.1088/1674-4926/44/11/112301

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Abstract: Modulation bandwidth enhancement in a directly modulated two-section distributed feedback (TS-DFB) laser based on a detuned loading effect is investigated and experimentally demonstrated. The results show that the 3-dB bandwidth of the TS-DFB laser is increased to 17.6 GHz and that chirp parameter can be reduced to 2.24. Compared to the absence of a detuned loading effect, there is a 4.6 GHz increase and a 2.45 reduction, respectively. After transmitting a 10 Gb/s non-return-to-zero (NRZ) signal through a 5-km fiber, the modulation eye diagram still achieves a large opening. Eight-channel laser arrays with precise wavelength spacing are fabricated. Each TS-DFB laser in the array has side mode suppression ratios (SMSR) > 49.093 dB and the maximum wavelength residual < 0.316 nm.

Key words: distributed feedback (DFB) laserdetuned loading effectdirect modulation



[1]
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[2]
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[3]
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[4]
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[5]
Kobayashi W, Tadokoro T, Ito T, et al. High-speed operation at 50 Gb/s and 60-km SMF transmission with 1.3-μm InGaAlAs-based DML. ISLC 2012 International Semiconductor Laser Conference, 2012, 50 doi: 10.1109/ISLC.2012.6348329
[6]
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[7]
Tadokoro T, Kobayashi W, Fujisawa T, et al. 43 Gb/s 1.3 μm DFB laser for 40 km transmission. J Light Technol, 2012, 30, 2520 doi: 10.1109/JLT.2012.2203095
[8]
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[9]
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[10]
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[11]
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[12]
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[13]
Zhao W, Mao Y F, Lu D, et al. Modulation bandwidth enhancement of monolithically integrated mutually coupled distributed feedback laser. Appl Sci, 2020, 10, 4375 doi: 10.3390/app10124375
[14]
Yamaoka S, Diamantopoulos N P, Nishi H, et al. Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate. Nat Photonics, 2021, 15, 28 doi: 10.1038/s41566-020-00700-y
[15]
Matsui Y, Schatz R, Che D, et al. Low-chirp isolator-free 65-GHz-bandwidth directly modulated lasers. Nat Photonics, 2021, 15, 59 doi: 10.1038/s41566-020-00742-2
[16]
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[17]
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[18]
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[19]
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[20]
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[21]
Sun Z X, Xiao R L, Zhao Y, et al. Design of four-channel wavelength-selectable In-series DFB laser array with 100-GHz spacing. J Light Technol, 2020, 38, 2299 doi: 10.1109/JLT.2020.2970788
[22]
Bandelow U, Schatz R, Wunsche H J. A correct single-mode photon rate equation for multisection lasers. IEEE Photonics Technol Lett, 1996, 8, 614 doi: 10.1109/68.491556
[23]
Chaciński M, Schatz R. Impact of losses in the Bragg section on the dynamics of detuned loaded DBR lasers. IEEE J Quantum Electron, 2010, 46, 1360 doi: 10.1109/JQE.2010.2048013
[24]
Devaux F, Sorel Y, Kerdiles J F. Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter. J Light Technol, 1993, 11, 1937 doi: 10.1109/50.257953
Fig. 1.  (Color online) Schematic of the proposed TS-DFB laser.

Fig. 2.  (Color online) (a) Schematic of the SBGs in TS-DFB lasers. (b) Reflection and transmission spectra of SBGs in different sections. (c) Threshold gain and threshold gain margin versus the length of the grating reflector.

Fig. 3.  (Color online) The principle of the detuned loading effect in TS-DFB lasers. Circles represent the main mode.

Fig. 4.  (Color online) Calculated small-signal modulation response of the TS-DFB laser and OS-DFB laser.

Fig. 5.  (Color online) (a) Measured spectra of the eight-channel TS-DFB laser array (I1 = 70 mA, I2 = 25 mA). (b) The corresponding lasing wavelengths of laser arrays (dots). The linear fitting line of wavelengths, and the residuals after fitting.

Fig. 6.  (Color online) Light-current characteristics of (a) the TS-DFB laser array and (b) the TS-DFB laser with different current I2.

Fig. 7.  (Color online) (a) Light-current characteristics with different temperatures when I2 is 25 mA. (b) Corresponding threshold current and slope efficiency.

Fig. 8.  (Color online) Measured SMSRs and lasing wavelengths. (a) I1 = 50−100 mA, I2 = 20 mA and (b) I2 = 0−25 mA, I1 = 70 mA.

Fig. 9.  (Color online) (a) Measured spectra at different temperatures when I1 is 70 mA and I2 is 20 mA. (b) The corresponding SMSRs and lasing wavelengths.

Fig. 10.  (Color online) (a) Photo of the TS-DFB laser on the carrier. (b) Experimental setup schematic for the measurement of dynamic characteristics. EDFA: erbium-doped fiber amplifier, OSC: oscilloscope, DC: direct-current power source, BERT: bit error rate tester, VNA: vector network analyzer, PD: photodetector.

Fig. 11.  (Color online) Small-signal modulation response of the TS-DFB laser. (a) I1 = 60−100 mA, I2 = 25 mA. (b) I2 = 0−25 mA, I1 = 100 mA.

Fig. 12.  (Color online) Measured chirp parameters at different currents.

Fig. 13.  (Color online) Eye diagrams under 10 Gb/s direct modulation after back-to-back (BTB) and 5 km single mode fiber transmission. (a) BTB, I2 = 0 mA. (b) BTB, I2 = 25 mA. (c) 5 km, I2 = 0 mA. (d) 5 km, I2 = 25 mA.

Fig. 14.  The measured BER under 10 Gb/s NRZ modulation when I2 is 25 mA.

[1]
Ishikawa T, Higashi T, Uchida T, et al. Evaluation of differential gain of 1.3/spl mu/m AlGaInAs/InP strained MQW lasers. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No. 98CH36129), 2002, 729 doi: 10.1109/ICIPRM.1998.712746
[2]
Morthier G. Design and optimization of strained-layer-multiquantum-well lasers for high-speed analog communications. IEEE J Quantum Electron, 1994, 30, 1520 doi: 10.1109/3.299483
[3]
Otsubo K, Matsuda M, Takada K, et al. 1.3-μm AlGaInAs multiple-quantum-well semi-insulating buried-heterostructure distributed-feedback lasers for high-speed direct modulation. IEEE J Sel Top Quantum Electron, 2009, 15, 687 doi: 10.1109/JSTQE.2009.2015194
[4]
Nakahara K, Wakayama Y, Kitatani T, et al. Direct modulation at 56 and 50 Gb/s of 1.3-μm InGaAlAs ridge-shaped-BH DFB lasers. IEEE Photonics Technol Lett, 2015, 27, 534 doi: 10.1109/LPT.2014.2384520
[5]
Kobayashi W, Tadokoro T, Ito T, et al. High-speed operation at 50 Gb/s and 60-km SMF transmission with 1.3-μm InGaAlAs-based DML. ISLC 2012 International Semiconductor Laser Conference, 2012, 50 doi: 10.1109/ISLC.2012.6348329
[6]
Sakaino G, Takiguchi T, Sakuma H, et al. 25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current. 22nd IEEE International Semiconductor Laser Conference, 2010, 197 doi: 10.1109/ISLC.2010.5642644
[7]
Tadokoro T, Kobayashi W, Fujisawa T, et al. 43 Gb/s 1.3 μm DFB laser for 40 km transmission. J Light Technol, 2012, 30, 2520 doi: 10.1109/JLT.2012.2203095
[8]
Uetake A, Otsubo K, Matsuda M, et al. 40-Gbps direct modulation of 1.55-µm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85°C. 2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009, 839 doi: 10.1109/LEOS.2009.5343421
[9]
Henry C. Performance of distributed feedback lasers designed to favor the energy gap mode. IEEE J Quantum Electron, 1985, 21, 1913 doi: 10.1109/JQE.1985.1072611
[10]
Matsui Y, Schatz R, Che D. Isolator-free > 67-GHz bandwidth DFB+R laser with suppressed chirp. 2020 Optical Fiber Communications Conference and Exhibition, 2020, 1 doi: 10.1364/OFC.2020.Th4A.1
[11]
Che D, Matsui Y, Schatz R, et al. Direct modulation of a 54-GHz distributed Bragg reflector laser with 100-GBaud PAM-4 and 80-GBaud PAM-8. 2020 Optical Fiber Communications Conference and Exhibition (OFC), 2020, 1 doi: 10.1364/OFC.2020.Th3C.1
[12]
Guan S J, Zhang Y S, Zheng J L, et al. Modulation bandwidth enhancement and frequency chirp suppression in two-section DFB laser. J Light Technol, 2022, 40, 7383 doi: 10.1109/JLT.2022.3203723
[13]
Zhao W, Mao Y F, Lu D, et al. Modulation bandwidth enhancement of monolithically integrated mutually coupled distributed feedback laser. Appl Sci, 2020, 10, 4375 doi: 10.3390/app10124375
[14]
Yamaoka S, Diamantopoulos N P, Nishi H, et al. Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate. Nat Photonics, 2021, 15, 28 doi: 10.1038/s41566-020-00700-y
[15]
Matsui Y, Schatz R, Che D, et al. Low-chirp isolator-free 65-GHz-bandwidth directly modulated lasers. Nat Photonics, 2021, 15, 59 doi: 10.1038/s41566-020-00742-2
[16]
Yuan B C, Shi J Q, Qi W X, et al. A monolithic integrated dual-wavelength DFB laser with equivalent inverse-Gaussian apodized grating. IEEE Photonics J, 2020, 12, 1 doi: 10.1109/JPHOT.2020.3030669
[17]
Guan S J, Zhang Y S, Yuan B C, et al. Research on the asymmetric corrugation-pitch-modulated HR-AR DFB lasers with sampled gratings. J Light Technol, 2021, 39, 4725 doi: 10.1109/JLT.2021.3075484
[18]
Zhang Y S, Yuan B C, Shi J Q, et al. A stable dual-wavelength DFB semiconductor laser with equivalent chirped sampled grating. IEEE J Quantum Electron, 2022, 58, 1 doi: 10.1109/JQE.2022.3223172
[19]
Vieu C, Carcenac F, Pépin A, et al. Electron beam lithography: Resolution limits and applications. Appl Surf Sci, 2000, 164, 111 doi: 10.1016/S0169-4332(00)00352-4
[20]
Dai Y T, Chen X F, Xia L, et al. Sampled Bragg grating with desired response in one channel by use of a reconstruction algorithm and equivalent chirp. Opt Lett, 2004, 29, 1333 doi: 10.1364/OL.29.001333
[21]
Sun Z X, Xiao R L, Zhao Y, et al. Design of four-channel wavelength-selectable In-series DFB laser array with 100-GHz spacing. J Light Technol, 2020, 38, 2299 doi: 10.1109/JLT.2020.2970788
[22]
Bandelow U, Schatz R, Wunsche H J. A correct single-mode photon rate equation for multisection lasers. IEEE Photonics Technol Lett, 1996, 8, 614 doi: 10.1109/68.491556
[23]
Chaciński M, Schatz R. Impact of losses in the Bragg section on the dynamics of detuned loaded DBR lasers. IEEE J Quantum Electron, 2010, 46, 1360 doi: 10.1109/JQE.2010.2048013
[24]
Devaux F, Sorel Y, Kerdiles J F. Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter. J Light Technol, 1993, 11, 1937 doi: 10.1109/50.257953
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    Received: 13 May 2023 Revised: 14 June 2023 Online: Accepted Manuscript: 06 September 2023Uncorrected proof: 20 October 2023Published: 10 November 2023

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      Yunshan Zhang, Yifan Xu, Shijian Guan, Jilin Zheng, Hongming Gu, Lianyan Li, Rulei Xiao, Tao Fang, Hui Zou, Xiangfei Chen. Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect[J]. Journal of Semiconductors, 2023, 44(11): 112301. doi: 10.1088/1674-4926/44/11/112301 ****Yunshan Zhang, Yifan Xu, Shijian Guan, Jilin Zheng, Hongming Gu, Lianyan Li, Rulei Xiao, Tao Fang, Hui Zou, Xiangfei Chen. 2023: Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect. Journal of Semiconductors, 44(11): 112301. doi: 10.1088/1674-4926/44/11/112301
      Citation:
      Yunshan Zhang, Yifan Xu, Shijian Guan, Jilin Zheng, Hongming Gu, Lianyan Li, Rulei Xiao, Tao Fang, Hui Zou, Xiangfei Chen. Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect[J]. Journal of Semiconductors, 2023, 44(11): 112301. doi: 10.1088/1674-4926/44/11/112301 ****
      Yunshan Zhang, Yifan Xu, Shijian Guan, Jilin Zheng, Hongming Gu, Lianyan Li, Rulei Xiao, Tao Fang, Hui Zou, Xiangfei Chen. 2023: Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect. Journal of Semiconductors, 44(11): 112301. doi: 10.1088/1674-4926/44/11/112301

      Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect

      DOI: 10.1088/1674-4926/44/11/112301
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      • Yunshan Zhang:received the B.S. degree in science and technology of electronics from Shandong University in 2002, and the Ph.D. degree in physical electronics from the Beijing Institute of Technology in 2011. From 2013 to 2015, he was a Post-Doctoral Researcher with the College of Engineering and Applied Sciences, Nanjing University. He is currently an Associate Professor with the Nanjing University of Posts and Telecommunications. His research interests include solid state lasers, DFB semiconductor lasers, fiber communication, and photonic integrated circuits
      • Xiangfei Chen:received the B.S. degree in physics from Soochow University in 1991, and the M.S. and Ph.D. degrees in physics from the Nanjing University in1993 and 1996, respectively. From 1996 to 2000, he was a Faculty Member with the Nanjing University of Posts and Telecommunications. From 2000 to 2006, he served as an Associate Professor with the Department of Electrical Engineering, Tsinghua University. From October 2004 to April 2005, he was a Visiting Scholar with the Microwave Photonics Research Laboratory, School of Information Technology and Engineering, University of Ottawa. He is currently a Professor with the Microwave Photonics Technology Laboratory, National Laboratory of Microstructures, and the College of Engineering and Applied Sciences, Nanjing University. His research interests include development of novel optical devices for high-speed large-capacity optical networks, microwave photonic systems, and fiber-optic sensors
      • Corresponding author: chenxf@nju.edu.cn
      • Received Date: 2023-05-13
      • Revised Date: 2023-06-14
      • Available Online: 2023-09-06

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