Citation: |
Haikun Jia. The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J]. Journal of Semiconductors, 2023, 44(5): 050202. doi: 10.1088/1674-4926/44/5/050202
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H K Jia. The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J]. J. Semicond, 2023, 44(5): 050202. doi: 10.1088/1674-4926/44/5/050202
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The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators
DOI: 10.1088/1674-4926/44/5/050202
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References
[1] Wu Q, Deng W, Jia H, et al. An 11.5-to-14.3GHz 192.8dBc/Hz FoM at 1MHz offset dual-core enhanced class-F VCO with common-mode-noise self-cancellation and isolation technique. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 2023, 146 doi: 10.1109/ISSCC42615.2023.10067672[2] Zhan X, Yin J, Mak P, et al. A 22.4-to-26.8GHz dual-path-synchronized quad-core oscillator achieving −138dBc/Hz PN and 193.3dBc/Hz FoM at 10MHz offset from 25.8GHz. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 2023, 148 doi: 10.1109/ISSCC42615.2023.10067277[3] Shu Y, Deng Z, Luo X. A 28GHz scalable inter-core-shaping multi-core oscillator with DM/CM-configured coupling achieving 193.3dBc/Hz FoM and 205.5dBc/Hz FoMA at 1MHz offset. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 2023, 150 doi: 10.1109/ISSCC42615.2023.10067826[4] Jia H K, Deng W, Guan P D, et al. A 60GHz 186.5dBc/Hz FoM quad-core fundamental VCO using circular triple-coupled transformer with No mode ambiguity in 65nm CMOS. 2021 IEEE International Solid-State Circuits Conference (ISSCC), 2021, 297 doi: 10.1109/ISSCC42613.2021.9366036[5] Guo H, Chen Y, Huang Y, et al. An 83.3-to-104.7GHz harmonic-extraction VCO incorporating multi-resonance, multi-core, and multi-mode (3M) techniques achieving –124dBc/Hz absolute PN and 190.7dBc/Hz FoMT. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 2023, 152 doi: 10.1109/ISSCC42615.2023.10067832[6] Shu Y Y, Qian H J, Luo X. A 18.6-to-40.1GHz 201.7dBc/Hz FoMT multi-core oscillator using E-M mixed-coupling resonance boosting. 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020, 272 doi: 10.1109/ISSCC19947.2020.9063100[7] Gong J, Patra B, Enthoven L, et al. A 0.049mm2 7.1-to-16.8GHz dual-core triple-mode VCO achieving 200dB FoMA in 22nm FinFET. 2022 IEEE International Solid-State Circuits Conference (ISSCC), 2022, 152 doi: 10.1109/ISSCC42614.2022.9731752 -
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