Fig. 1.
(Color online) The process flow for transferring β-Ga2O3 thin film onto SiC (or Si) by ion-cutting. Reprinted from Xu et al.[4]. Copyright 2021, with permission from IEEE.
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| Citation: |
Genquan Han, Tiangui You, Yibo Wang, Zheng-Dong Luo, Xin Ou, Yue Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. Journal of Semiconductors, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301
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G Q Han, T G You, Y B Wang, Z D Luo, X Ou, Y Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. J. Semicond, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301
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Heterogeneous integration technology for the thermal management of Ga2O3 power devices
DOI: 10.1088/1674-4926/44/6/060301
More Information
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Genquan Han：is a full professor at Xidian University and a recipient of the National Science Fund for Distinguished Young Scholars. He graduated from Tsinghua University with a bachelor's degree and received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2008. After graduation, he joined the National University of Singapore to conduct research on advanced microelectronic devices and made original contributions in the field of advanced CMOS device research. Since returning to China in 2013, he has mainly focused on research in wide-bandgap gallium oxide (Ga2O3) heterojunction integrated materials and power devices, post-Moore new micro/nano devices and chips. He serves as an editor for IEEE Electron Device Letters -
Xin Ou：is a professor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. He received his Ph.D. degree in microelectronics and solid-state electronics from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences in 2010. After that he worked in Helmholtz Zentrum Dresden Rossendorf in Germany until 2014 when he joined SIMIT as a professor. He has authored more than 100 SCI papers and been authorized 20 patents. His current research interests include the hetero-integration of functional materials for high-performance electrical, optical and acoustical devices. He is a senior member of IEEE -
Yue Hao：is currently a Professor of Microelectronics and Solid-State Electronics with Xidian University, Xi’an, China. His current interests include wide and untra-wide bandgap materials and devices, advanced CMOS devices and technology, semiconductor device reliability physics and failure mechanism, and organic electronics. He is a member of the Chinese Academy of Sciences - Corresponding author: gqhan@xidian.edu.cn
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References
[1] Barman S K, Huda M N. Mechanism behind the easy exfoliation of Ga2O3 ultra-thin film along (100) surface. Phys Status Solidi RRL, 2019, 13, 1800554 doi: 10.1002/pssr.201800554[2] Cheng Z, Wheeler V D, Bai T Y, et al. Integration of polycrystalline Ga2O3 on diamond for thermal management. Appl Phys Lett, 2020, 116, 062105 doi: 10.1063/1.5125637[3] Li Z M, Jiao T, Yu J Q, et al. Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD. Vacuum, 2020, 178, 109440 doi: 10.1016/j.vacuum.2020.109440[4] Xu W H, Wang Y B, You T G, et al. First demonstration of waferscale heterogeneous integration of Ga2O3 MOSFETs on SiC and Si substrates by ion-cutting process. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2020, 12.5. 1 doi: 10.1109/IEDM19573.2019.8993501[5] Shen Z H, Xu W H, Chen Y, et al. Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures. Sci China Mater, 2023, 66, 756 doi: 10.1007/s40843-022-2187-2[6] Xu W H, You T G, Wang Y B, et al. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC. Fundam Res, 2021, 1, 691 doi: 10.1016/j.fmre.2021.11.003[7] Wang Y B, Xu W H, Han G Q, et al. Channel properties of Ga2O3-on-SiC MOSFETs. IEEE Trans Electron Devices, 2021, 68, 1185 doi: 10.1109/TED.2021.3051135[8] Wang Y B, Xu W H, You T G, et al. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process. Sci China Phys Mech Astron, 2020, 63, 277311 doi: 10.1007/s11433-020-1533-0[9] Wang Y B, Xu W H, Han G Q, et al. Channel mobility properties of β-Ga2O3 MOSFETs on Si substrate fabricated by ion-cutting process. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). Chengdu, China. IEEE, 2021, 1 doi: 10.1109/EDTM50988.2021.9420854[10] Wang Y B, Han G Q, Xu W H, et al. Recessed-gate Ga2O3-on-SiC MOSFETs demonstrating a stable power figure of merit of 100 mW/cm² up to 200 °C. IEEE Trans Electron Devices, 2022, 69, 1945 doi: 10.1109/TED.2022.3154340 -
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