Fig. 1.
(Color online) The schematic diagram of the roadmap and structures for SBDs. Surface engineering technique (a), and edge termination techniques (b-e) have emerged in recent years.
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| Citation: |
Guangwei Xu, Feihong Wu, Qi Liu, Zhao Han, Weibing Hao, Jinbo Zhou, Xuanze Zhou, Shu Yang, Shibing Long. Vertical β-Ga2O3 power electronics[J]. Journal of Semiconductors, 2023, 44(7): 070301. doi: 10.1088/1674-4926/44/7/070301
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Guangwei Xu, Feihong Wu, Qi Liu, Zhao Han, Weibing Hao, Jinbo Zhou, Xuanze Zhou, Shu Yang, Shibing Long. 2023: Vertical β-Ga2O3 power electronics. Journal of Semiconductors, 44(7): 070301. doi: 10.1088/1674-4926/44/7/070301
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