J. Semicond. > 2023, Volume 44 > Issue 7 > 072805
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ARTICLES

Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters

Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu and Shibing Long

+ Author Affiliations

 Corresponding author: Guangwei Xu, xugw@ustc.edu.cn; Shibing Long, shibinglong@ustc.edu.cn

DOI: 10.1088/1674-4926/44/7/072805

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Abstract: We demonstrate superb large-area vertical β-Ga2O3 SBDs with a Schottky contact area of 1 × 1 mm2 and obtain a high-efficiency DC–DC converter based on the device. The β-Ga2O3 SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (VF) and the on-resistance (Ron) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga2O3 SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga2O3 SBDs and relevant circuits in power electronic applications.

Key words: β-Ga2O3, SBD, DC–DC converter

Power devices and circuits are the most important parts of the electrical energy conversion system. Meanwhile, power devices and circuits based on ultra-wide bandgap semiconductors can contribute to reducing the power consumption in the conversion[1].

β-Ga2O3 is considered to have great potential in power electronic applications due to its wide bandgap of approximately 4.8 eV, high critical electric field of 8 MV/cm and high Baliga’s figure of merit of 3444[2-4]. These properties make β-Ga2O3 power devices promising for high voltage, high power and other applications[5, 6].

In the past decade, β-Ga2O3 devices, especially Schottky barrier diodes (SBDs), have developed rapidly, whose performances have been improved significantly and currently approach those of SiC and GaN[7-12]. At present, the works of large-area devices mainly focus on the combination with edge termination[13-16], while the baseline devices or named termination-free SBDs are rarely investigated for large-current applications. Our recent work demonstrated that the performance of small-area SBDs can be greatly improved by interface engineering[11], thus it is a chance for large-area devices. The high-performance SBDs with free termination may better reflect the application potential of Ga2O3 SBD. In a word, the Ga2O3 SBD is more mature for applications and needs to be further demonstrated for its application potential.

In this work, we achieved a high-performance large-area vertical β-Ga2O3 SBD with a Schottky contact area of 1 × 1 mm2, and then realized its application in a DC–DC converter with high efficiency. The β-Ga2O3 SBD obtained good forward characteristics of 8 A@5 V, a low Ron of 0.46 Ω and a high breakdown voltage (Vbr) of 612 V. A prototype of the DC–DC converter is demonstrated using the β-Ga2O3 SBD, then a conversion efficiency of 95.81% is obtained.

The schematic cross section and optical image of the β-Ga2O3 SBD are shown in Fig. 1. The Ga2O3 substrate has a doping concentration about 7.0 × 1018 cm−3 with a thickness of 610 μm, and the 8.5 μm-thick Ga2O3 epitaxial layer grown by halide vapor phase epitaxy (HVPE) has a doping concentration of approximately 1.9 × 1016 cm−3. After organic and acid cleaning, the upper surface of the epitaxial layer is removed by ICP180 to remove the unreliable surface[11]. Following the piranha solution, the backside of the Ga2O3 substrate is coated with Ti/Al/Ni/Au (20/200/50/50 nm) metal stacks by electron beam evaporation (E-beam), and then undergoes rapid thermal annealing at 470 °C in N2 for 1 min to improve ohmic contact. The Schottky electrode with Ni/Au (50/100 nm) is deposited by the E-beam system. The Schottky contact area of the β-Ga2O3 SBD is 1 × 1 mm2.

Fig. 1.  (Color online) (a) Schematic cross section of the β-Ga2O3 SBD. (b) Optical image.
DownLoad: Full-Size Img PowerPoint

Fig. 2(a) shows the forward conduction characteristics of the β-Ga2O3 SBD. The forward turn-on voltage (VF) and the on-resistance (Ron) are 1.17 V and 0.46 Ω, respectively. A forward current of 8 A can be obtained at a forward voltage of 5 V in pulse mode (50-μs pulse width and 1% duty cycle). Meanwhile, the Vbr of the β-Ga2O3 SBD is 612 V as shown in Fig. 2(b).

Fig. 2.  (Color online) (a) Forward conduction characteristics and (b) reverse breakdown characteristics of the 1×1 mm2.
DownLoad: Full-Size Img PowerPoint

The performance of the β-Ga2O3 SBD is benchmarked against some reported state-of-the-art large-area β-Ga2O3 SBDs with electrode areas above 0.2 mm2 in the plot of Ron,sp versus Vbr in Fig. 3[9, 16-19]. The specific on-resistance (Ron,sp) is 4.6 mΩ·cm2. Associated with the Vbr of 612 V, the β-Ga2O3 SBD presents a FOM of 81.4 MW/cm2. Compared with the reported work, the fabricated β-Ga2O3 SBD in this work exhibits superior performance.

Fig. 3.  (Color online) Ron, sp versus Vbr benchmarks of reported state-of-the-art large-area β-Ga2O3 SBDs with electrode areas above 0.2 mm2.
DownLoad: Full-Size Img PowerPoint

In order to judge the relative performance of the device with the commercial SBDs based on Si and SiC, and to quantify the remaining gap to be closed in the future, we compared our β-Ga2O3 SBD with the commercial Si FRD (STTH1L06, 600 V/1 A) and SiC SBD (CSD01060A, 600 V/1 A) as shown in Table 1. From the results, we can obtain that our β-Ga2O3 SBD shows a comparable performance with commercial Si FRD and SiC SBD, while the β-Ga2O3 device is just in its infancy. Reducing the on-resistance and increasing the breakdown voltage are still the key points of our work in future development.

Table 1.  Properties of the β-Ga2O3 with commercial Si and SiC devices.
ParametersSi FRDSiC SBDβ-Ga2O3 SBD
Ron (Ω)0.170.380.46
Vbr (V)663776612
Irr (A)3.611.541.9
trr (ns)16.96.87.4
Qrr (nC)38.346.508.69
DownLoad: CSV  | Show Table

A double-pulse test (DPT) circuit was designed to evaluate the switching performance of β-Ga2O3 SBD[16], and the reverse recovery characteristic of β-Ga2O3 SBD was measured when the device switched from a forward current of 1 A to a reverse bias voltage of 100 V with a di/dt of 500 A/μs. The reverse recovery characteristics of the Si FRD, SiC SBD and β-Ga2O3 SBD are contrasted in Fig. 4, and the properties of the β-Ga2O3 with commercial Si and SiC devices are shown in Table 1. We can obtain from the experimental results that the reverse recovery characteristic of the β-Ga2O3 SBD has an apparent advantage over Si FRD and approaches to SiC SBD.

Fig. 4.  (Color online) The reverse recovery characteristics of the Si FRD, SiC SBD and β-Ga2O3 SBD.
DownLoad: Full-Size Img PowerPoint

In order to demonstrate the application potential, the β-Ga2O3 SBD is encapsulated in the TO-220 package, and then implemented in a DC–DC converter circuit. The circuit configuration of the converter is shown in Fig. 5, and the specifications of the converter are summarized in Table 2.

Fig. 5.  (Color online) Schematic of the DC-DC converter based on the β-Ga2O3 SBD.
DownLoad: Full-Size Img PowerPoint
Table 2.  Specifications of the DC-DC converter.
ParametersValuesParametersValues
GaN FET650 V/180 mΩL (mH)1
VIN (V)200f (kHz)100
CIN@315 V (μF)100D40%
COUT@500 V (μF)6.8R (kΩ)1
DownLoad: CSV  | Show Table

A 650 V/180 mΩ discrete GaN FET with part number TPH3206PSB (Transphorm) is used for switching control. The gate driver of Si8261 (Skyworks) is used to drive the GaN FET, and the gate-source voltage (VGS) is +9 V during the on-state and 0 V during the off-state. The input voltage (VIN) is selected to be 200 V, and the converter is operated at a switching frequency (f) of 100 kHz and a duty cycle (D) of 40%.

Fig. 6.  (Color online) Photograph of the β-Ga2O3 SBD-based DC-DC converter and the testing platform.
DownLoad: Full-Size Img PowerPoint

Fig. 6 shows the β-Ga2O3 SBD-based DC–DC converter and the testing platform. The square signal for the gate driver was generated by an arbitrary function waveform generator (Keysight, 33600A), and the auxiliary voltage for the gate driver (VAUX) was provided by a DC power supply (ITECH, IT6333C). The input voltage (VIN) was generated by an auto range DC power supply (ITECH, IT6526C), and the output signal (VOUT) was tested through a DC electronic load (ITECH, IT8902E). The voltage and current waveforms were monitored by an oscilloscope (Keysight, MSOX6004A).

The experimental waveforms of the gate-source voltage (VGS), the output voltage (VOUT), the inductor current (IL), the diode voltage (VD) and the diode current (ID) in the β-Ga2O3 SBD-based DC–DC converter are shown in Figs. 7 and 8. The spike in the waveform of the diode current (ID) is due to the reverse recovery characteristics of the SBD. The experimental results are shown in Table 3, the output voltage of the converter is approximately 329.7 V, and the output voltage ripple is less than 0.5%. The conversion efficiency of the β-Ga2O3 SBD-based DC–DC converter is 95.81%.

Fig. 7.  (Color online) Experimental waveforms of the VGS, VOUT and IL in the β-Ga2O3 SBD-based DC-DC converter.
DownLoad: Full-Size Img PowerPoint
Fig. 8.  (Color online) Experimental waveforms of the VGS, VD and ID in the β-Ga2O3 SBD-based DC-DC converter.
DownLoad: Full-Size Img PowerPoint
Table 3.  Experimental results of the DC-DC converter.
ParametersValuesParametersValues
VIN (V)200PIN (W)115.28
VAUX (V)9POUT (W)110.45
VOUT (V)329.7Efficiency95.81%
DownLoad: CSV  | Show Table

In conclusion, we have achieved a high-performance large-area vertical β-Ga2O3 SBD with a Schottky contact area of 1 × 1 mm2 and obtained a high-efficiency DC–DC converter based on the device. The β-Ga2O3 SBD can obtain a forward current of 8 A at a forward voltage of 5 V, and has a Vbr of 612 V. The conversion efficiency of the β-Ga2O3 SBD-based DC–DC converter is 95.81%. The decent performance of Ga2O3 SBDs and their circuits shows great potential in power electronic applications. Future works will introduce the edge termination technique to this baseline device.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) under Grant Nos. 61925110, 61821091, 62004184 and 62234007, the Key-Area Research and Development Program of Guangdong Province under Grant No. 2020B010174002. This work was partially carried out at the Center for Micro and Nanoscale Research and Fabrication of University of Science and Technology of China (USTC).



[1]
Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
[2]
Sasaki K, Higashiwaki M, Kuramata A, et al. Ga2O3 Schottky barrier diodes fabricated by using single-crystal β–Ga2O3 (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[3]
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[4]
Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[5]
Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124, 220901 doi: 10.1063/1.5062841
[6]
Ren F, Yang J C, Fares C, et al. Device processing and junction formation needs for ultra-high power Ga2O3 electronics. MRS Commun, 2019, 9, 77 doi: 10.1557/mrc.2019.4
[7]
Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110, 103506 doi: 10.1063/1.4977857
[8]
Zhou H, Yan Q L, Zhang J C, et al. High-performance vertical β-Ga2O3 Schottky barrier diode with implanted edge termination. IEEE Electron Device Lett, 2019, 40, 1788 doi: 10.1109/LED.2019.2939788
[9]
Ji M, Taylor N R, Kravchenko I, et al. Demonstration of large-size vertical Ga2O3 Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36, 41 doi: 10.1109/TPEL.2020.3001530
[10]
Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/ Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41, 107 doi: 10.1109/LED.2019.2953559
[11]
He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43, 264 doi: 10.1109/LED.2021.3133866
[12]
Yang J C, Ren F, Chen Y T, et al. Dynamic switching characteristics of 1 A forward current β-Ga2O3 rectifiers. IEEE J Electron Devices Soc, 2018, 7, 57 doi: 10.1109/JEDS.2018.2877495
[13]
Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36, 6179 doi: 10.1109/TPEL.2020.3036442
[14]
Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio. Appl Phys Exp, 2022, 15, 016501 doi: 10.35848/1882-0786/ac4080
[15]
Hao W B, Wu F H, Li W S, et al. High-performance vertical β- Ga2O3 Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2023, 9.5.1 doi: 10.1109/IEDM45625.2022.10019468
[16]
Guo W, Jian G Z, Hao W B, et al. β-Ga2O3 field plate Schottky barrier diode with superb reverse recovery for high-efficiency DC–DC converter. IEEE J Electron Devices Soc, 2022, 10, 933 doi: 10.1109/JEDS.2022.3212368
[17]
Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga2O3 Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36, 10976 doi: 10.1109/TPEL.2021.3069918
[18]
Yang J C, Fares C, Elhassani R, et al. Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers. ECS J Solid State Sci Technol, 2019, 8, Q3159 doi: 10.1149/2.0211907jss
[19]
Sharma R, Xian M H, Fares C, et al. Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers. J Vac Sci Technol A, 2021, 39, 013406 doi: 10.1116/6.0000815
Fig. 1.  (Color online) (a) Schematic cross section of the β-Ga2O3 SBD. (b) Optical image.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Forward conduction characteristics and (b) reverse breakdown characteristics of the 1×1 mm2.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Ron, sp versus Vbr benchmarks of reported state-of-the-art large-area β-Ga2O3 SBDs with electrode areas above 0.2 mm2.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) The reverse recovery characteristics of the Si FRD, SiC SBD and β-Ga2O3 SBD.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Schematic of the DC-DC converter based on the β-Ga2O3 SBD.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Photograph of the β-Ga2O3 SBD-based DC-DC converter and the testing platform.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) Experimental waveforms of the VGS, VOUT and IL in the β-Ga2O3 SBD-based DC-DC converter.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  (Color online) Experimental waveforms of the VGS, VD and ID in the β-Ga2O3 SBD-based DC-DC converter.

DownLoad: Full-Size Img PowerPoint

Table 1.   Properties of the β-Ga2O3 with commercial Si and SiC devices.

ParametersSi FRDSiC SBDβ-Ga2O3 SBD
Ron (Ω)0.170.380.46
Vbr (V)663776612
Irr (A)3.611.541.9
trr (ns)16.96.87.4
Qrr (nC)38.346.508.69
DownLoad: CSV

Table 2.   Specifications of the DC-DC converter.

ParametersValuesParametersValues
GaN FET650 V/180 mΩL (mH)1
VIN (V)200f (kHz)100
CIN@315 V (μF)100D40%
COUT@500 V (μF)6.8R (kΩ)1
DownLoad: CSV

Table 3.   Experimental results of the DC-DC converter.

ParametersValuesParametersValues
VIN (V)200PIN (W)115.28
VAUX (V)9POUT (W)110.45
VOUT (V)329.7Efficiency95.81%
DownLoad: CSV
[1]
Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
[2]
Sasaki K, Higashiwaki M, Kuramata A, et al. Ga2O3 Schottky barrier diodes fabricated by using single-crystal β–Ga2O3 (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[3]
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[4]
Pearton S J, Yang J C, Cary P H IV, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[5]
Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124, 220901 doi: 10.1063/1.5062841
[6]
Ren F, Yang J C, Fares C, et al. Device processing and junction formation needs for ultra-high power Ga2O3 electronics. MRS Commun, 2019, 9, 77 doi: 10.1557/mrc.2019.4
[7]
Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110, 103506 doi: 10.1063/1.4977857
[8]
Zhou H, Yan Q L, Zhang J C, et al. High-performance vertical β-Ga2O3 Schottky barrier diode with implanted edge termination. IEEE Electron Device Lett, 2019, 40, 1788 doi: 10.1109/LED.2019.2939788
[9]
Ji M, Taylor N R, Kravchenko I, et al. Demonstration of large-size vertical Ga2O3 Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36, 41 doi: 10.1109/TPEL.2020.3001530
[10]
Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/ Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41, 107 doi: 10.1109/LED.2019.2953559
[11]
He Q M, Hao W B, Zhou X Z, et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 2022, 43, 264 doi: 10.1109/LED.2021.3133866
[12]
Yang J C, Ren F, Chen Y T, et al. Dynamic switching characteristics of 1 A forward current β-Ga2O3 rectifiers. IEEE J Electron Devices Soc, 2018, 7, 57 doi: 10.1109/JEDS.2018.2877495
[13]
Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36, 6179 doi: 10.1109/TPEL.2020.3036442
[14]
Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio. Appl Phys Exp, 2022, 15, 016501 doi: 10.35848/1882-0786/ac4080
[15]
Hao W B, Wu F H, Li W S, et al. High-performance vertical β- Ga2O3 Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2023, 9.5.1 doi: 10.1109/IEDM45625.2022.10019468
[16]
Guo W, Jian G Z, Hao W B, et al. β-Ga2O3 field plate Schottky barrier diode with superb reverse recovery for high-efficiency DC–DC converter. IEEE J Electron Devices Soc, 2022, 10, 933 doi: 10.1109/JEDS.2022.3212368
[17]
Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga2O3 Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36, 10976 doi: 10.1109/TPEL.2021.3069918
[18]
Yang J C, Fares C, Elhassani R, et al. Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers. ECS J Solid State Sci Technol, 2019, 8, Q3159 doi: 10.1149/2.0211907jss
[19]
Sharma R, Xian M H, Fares C, et al. Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers. J Vac Sci Technol A, 2021, 39, 013406 doi: 10.1116/6.0000815
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Chinese Journal of Semiconductors , 2006, 27(10): 1742-1749.

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    Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805
    W Guo, Z Han, X L Zhao, G W Xu, S B Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. J. Semicond, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805
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    Received: 30 December 2022 Revised: 15 February 2023 Online: Accepted Manuscript: 09 May 2023Uncorrected proof: 05 June 2023Published: 10 July 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(7): 072805
      Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805 ****W Guo, Z Han, X L Zhao, G W Xu, S B Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. J. Semicond, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805
      Citation:
      Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805 ****
      W Guo, Z Han, X L Zhao, G W Xu, S B Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. J. Semicond, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805
      shu

      Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters

      DOI: 10.1088/1674-4926/44/7/072805

      • School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

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      • Wei Guo：got his BS degree from Xi’an Technological University in 2016. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on DC–DC converters based on Ga2O3 devices
      • Zhao Han：got his BS degree from Anhui University in 2020. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on Ga2O3 Schottky barrier diodes
      • Guangwei Xu：received his PhD degree at IMECAS in 2017. Then, he joined the University of California, Los Angeles as a postdoc. He joined the University of Science and Technology of China as an associate research fellow in Shibing Long’s Group in 2019. His research focuses on wide bandgap semiconductor power device fabrication, device defect measurement and modeling
      • Shibing Long：is a full professor at the School of Microelectronics, University of Science and Technology of China. He received his PhD degree at IMECAS in 2005. In 2011, he was a visiting scholar at Universitat Autònoma de Barcelona for a year. Then, he joined the University of Science and Technology of China in 2018. His research focuses on ultra-wide bandgap semiconductor devices, micro and nano fabrication and memories. He has published more than 100 papers in international academic journals and conferences such as IEEE EDL, IEEE ISPSD and IEEE IEDM, SCI has cited more than 4000 times
      • Corresponding author: xugw@ustc.edu.cn; shibinglong@ustc.edu.cn
      • Received Date: 2022-12-30
      • Revised Date: 2023-02-15
        • Available Online: 2023-05-09

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