Fig. 1.
(Color online) (a) Schematic cross section of the β-Ga2O3 SBD. (b) Optical image.
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| Citation: |
Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7): 072805. doi: 10.1088/1674-4926/44/7/072805
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Wei Guo, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shibing Long, Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters[J]. Journal of Semiconductors, 2023, 44(7), 072805 doi: 10.1088/1674-4926/44/7/072805
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Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters
DOI: 10.1088/1674-4926/44/7/072805
More Information
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Wei Guo：got his BS degree from Xi’an Technological University in 2016. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on DC–DC converters based on Ga2O3 devices -
Zhao Han：got his BS degree from Anhui University in 2020. Now he is a PhD student at the University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on Ga2O3 Schottky barrier diodes -
Guangwei Xu：received his PhD degree at IMECAS in 2017. Then, he joined the University of California, Los Angeles as a postdoc. He joined the University of Science and Technology of China as an associate research fellow in Shibing Long’s Group in 2019. His research focuses on wide bandgap semiconductor power device fabrication, device defect measurement and modeling -
Shibing Long：is a full professor at the School of Microelectronics, University of Science and Technology of China. He received his PhD degree at IMECAS in 2005. In 2011, he was a visiting scholar at Universitat Autònoma de Barcelona for a year. Then, he joined the University of Science and Technology of China in 2018. His research focuses on ultra-wide bandgap semiconductor devices, micro and nano fabrication and memories. He has published more than 100 papers in international academic journals and conferences such as IEEE EDL, IEEE ISPSD and IEEE IEDM, SCI has cited more than 4000 times - Corresponding author: xugw@ustc.edu.cn; shibinglong@ustc.edu.cn
- Revised Date: 2023-02-15 Available Online: 2023-05-09
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Abstract
We demonstrate superb large-area vertical β-Ga2O3 SBDs with a Schottky contact area of 1 × 1 mm2 and obtain a high-efficiency DC–DC converter based on the device. The β-Ga2O3 SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (VF) and the on-resistance (Ron) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga2O3 SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga2O3 SBDs and relevant circuits in power electronic applications.-
Keywords:
- β-Ga2O3,
- SBD,
- DC–DC converter
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References
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