Citation: |
Hoi-Sing Kwok, Zhiyong Fan. Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays[J]. Journal of Semiconductors, 2023, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101
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Hoi-Sing Kwok, Zhiyong Fan. 2023: Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays. Journal of Semiconductors, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101
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Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future DisplaysCelebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST
DOI: 10.1088/1674-4926/44/9/090101
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References
[1] Shi R X, Lei T T, Xia Z H, et al. Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems. J Semicond, 2023, 44(9), 091601 doi: 10.1088/1674-4926/44/9/091601[2] Chen F L, Zhang M, Wan Y H, et al. Advances in mobility enhancement of ITZO thin-film transistors: a review. J Semicond, 2023, 44(9), 091602 doi: 10.1088/1674-4926/44/9/091602[3] Wang Y X, Li J Y, Liu F Y, et al. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors. J Semicond, 2023, 44(9), 092601 doi: 10.1088/1674-4926/44/9/092601[4] Tam B S T, Dong S C, Tang C W. Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation. J Semicond, 2023, 44(9), 092602 doi: 10.1088/1674-4926/44/9/092602[5] Qu X W, Sun X W. Impedance spectroscopy for quantum dot light-emitting diodes. J Semicond, 2023, 44(9), 091603 doi: 10.1088/1674-4926/44/9/091603[6] Li D P, Ma J R, Liu W B, et al. Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment. J Semicond, 2023, 44(9), 092603 doi: 10.1088/1674-4926/44/9/092603[7] Qammar M, Zou B, Halpert J E. Organic-inorganic halide perovskites for memristors. J Semicond, 2023, 44(9), 091604 doi: 10.1088/1674-4926/44/9/091604[8] Long Z H, Ding Y C, Qiu X, et al. A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging. J Semicond, 2023, 44(9), 092604 doi: 10.1088/1674-4926/44/9/092604[9] Zhang W L, Schneider J, Prodanov M F, et al. Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment. J Semicond, 2023, 44(9), 092605 doi: 10.1088/1674-4926/44/9/092605[10] Wong M H. A landscape of β-Ga2O3 Schottky power diodes. J Semicond, 2023, 44(9), 091605 doi: 10.1088/1674-4926/44/9/091605 -
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