Fig. 1.
(Color online) Schematic cross-section of the fabricated SATG a-IGZO TFTs.
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| Citation: |
Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J]. Journal of Semiconductors, 2023, 44(9): 092601. doi: 10.1088/1674-4926/44/9/092601
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Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu, Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J]. Journal of Semiconductors, 2023, 44(9), 092601 doi: 10.1088/1674-4926/44/9/092601
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Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors
DOI: 10.1088/1674-4926/44/9/092601
More Information
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Yanxin Wang：received his BS degree in 2021 from the University of Electronic Science and Technology of China. Now he is pursuing an MS degree in Microelectronics from Peking University Shenzhen Graduate School. His current research interests include the fabrication and stability study of oxide thin-film transistors -
Shengdong Zhang：received his BS and MS degrees in Electronic Engineering from Southeast University, and his PhD degree in Microelectronics from Peking University. In 2002, he joined the School of Electronics Engineering and Computer Science at Peking University. He is currently a professor at the School of Electronic and Computer Engineering at Peking University Shenzhen Graduate School. His research interests include integrated circuit design, thin-film transistors and flexible display -
Lei Lu：received his BS and MS degrees in Microelectronics from Soochow University, and his PhD degree in Electronic and Computer Engineering from The Hong Kong University of Science and Technology. He worked at The Hong Kong University of Science and Technology from 2015 to 2019, and joined the School of Electronic and Computer Engineering at Peking University Shenzhen Graduate School in 2019, where he is now an assistant professor. His research interests include semiconductor devices, advanced display technology and flexible electronics - Corresponding author: lulei@pku.edu.cn
- Revised Date: 2023-07-06 Available Online: 2023-08-22
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Abstract
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs. -
References
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