Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb

Zhi Deng; Hailong Wang; Qiqi Wei; Lei Liu; Hongli Sun; Dong Pan; Dahai Wei; Jianhua Zhao

doi:10.1088/1674-4926/45/1/012101

J. Semicond. > 2024, Volume 45 > Issue 1 > 012101

ARTICLES

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

Zhi Deng^{1, 2}, Hailong Wang^{1, 2,}, Qiqi Wei^{1, 2}, Lei Liu^{1, 2}, Hongli Sun^{1, 2}, Dong Pan^{1, 2}, Dahai Wei^{1, 2} and Jianhua Zhao^{1, 2}

+ Author Affiliations

Corresponding author: Hailong Wang, allen@semi.ac.cn

DOI: 10.1088/1674-4926/45/1/012101

Abstract: (Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T_C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K_u of (Ga,Fe)Sb is below 7.6 × 10³ erg/cm³ when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga_1-x-yFe_xNi_ySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga_0.76-yFe_0.24Ni_ySb can be enhanced by increasing y, in which K_u is negligible at y = 1.7% but increases to 3.8 × 10⁵ erg/cm³ at y = 6.1% (T_C = 354 K). In addition, the hole mobility (µ) of Ga_1-x-yFe_xNi_ySb reaches 31.3 cm²/(V∙s) at x = 23.7%, y = 1.7% (T_C = 319 K), which is much higher than the mobility of Ga_1-xFe_xSb at x = 25.2% (µ = 6.2 cm²/(V∙s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.

Key words: magnetic semiconductor, molecular beam epitaxy, Fe-Ni co-doping, magnetic anisotropy, hole mobility

References

[1]	Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281, 951 doi: 10.1126/science.281.5379.951
[2]	Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287, 1019 doi: 10.1126/science.287.5455.1019
[3]	Chiba D, Sawicki M, Nishitani Y, et al. Magnetization vector manipulation by electric fields. Nature, 2008, 455, 515 doi: 10.1038/nature07318
[4]	Jungwirth T, Wunderlich J, Novák V, et al. Spin-dependent phenomena and device concepts explored in (Ga, Mn)As. Rev Mod Phys, 2014, 86, 855 doi: 10.1103/RevModPhys.86.855
[5]	Dietl T, Ohno H. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 2014, 86, 187 doi: 10.1103/RevModPhys.86.187
[6]	Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors. Phys Rev Lett, 1992, 68, 2664 doi: 10.1103/PhysRevLett.68.2664
[7]	Koshihara S, Oiwa A, Hirasawa M, et al. Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In, Mn)As/GaSb. Phys Rev Lett, 1997, 78, 4617 doi: 10.1103/PhysRevLett.78.4617
[8]	Akai H. Ferromagnetism and its stability in the diluted magnetic semiconductor (In, Mn)As. Phys Rev Lett, 1998, 81, 3002 doi: 10.1103/PhysRevLett.81.3002
[9]	Oiwa A, Endo A, Katsumoto S, et al. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In, Mn)As/(Ga, Al)Sb. Phys Rev B, 1999, 59, 5826 doi: 10.1103/PhysRevB.59.5826
[10]	Schallenberg T, Munekata H. Preparation of ferromagnetic (In, Mn)As with a high Curie temperature of 90K. Appl Phys Lett, 2006, 89, 042507 doi: 10.1063/1.2236210
[11]	Ohno H, Shen A, Matsukura F, et al. (Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs. Appl Phys Lett, 1996, 69, 363 doi: 10.1063/1.118061
[12]	Matsukura F, Ohno H, Shen A, et al. Transport properties and origin of ferromagnetism in (Ga, Mn)As. Phys Rev B, 1998, 57, R2037 doi: 10.1103/PhysRevB.57.R2037
[13]	Chen L, Yang X, Yang F H, et al. Enhancing the curie temperature of ferromagnetic semiconductor (Ga, Mn)As to 200 K via nanostructure engineering. Nano Lett, 2011, 11, 2584 doi: 10.1021/nl201187m
[14]	Wang H L, Ma J L, Zhao J H. Giant modulation of magnetism in (Ga, Mn)As ultrathin films via electric field. J Semicond, 2019, 40, 092501 doi: 10.1088/1674-4926/40/9/092501
[15]	Wang H L, Ma J L, Wei Q Q, et al. Mn doping effects on the gate-tunable transport properties of Cd₃As₂ films epitaxied on GaAs. J Semicond, 2020, 41, 072903 doi: 10.1088/1674-4926/41/7/072903
[16]	Tu N T, Hai P N, Anh L D, et al. (Ga, Fe)Sb: A p-type ferromagnetic semiconductor. Appl Phys Lett, 2014, 105, 132402 doi: 10.1063/1.4896539
[17]	Tu N T, Hai P N, Anh L D, et al. Magnetic properties and intrinsic ferromagnetism in (Ga, Fe)Sb ferromagnetic semiconductors. Phys Rev B, 2015, 92, 144403 doi: 10.1103/PhysRevB.92.144403
[18]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb. Appl Phys Lett, 2016, 108, 192401 doi: 10.1063/1.4948692
[19]	Goel S, Anh L D, Ohya S, et al. Ferromagnetic resonance and control of magnetic anisotropy by epitaxial strain in the ferromagnetic semiconductor (Ga_0.8, Fe_0.2)Sb at room temperature. Phys Rev B, 2019, 99, 014431 doi: 10.1103/PhysRevB.99.014431
[20]	Goel S, Anh L D, Ohya S, et al. In-plane to perpendicular magnetic anisotropy switching in heavily-Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. Phys Rev Materials , 2019, 084417 doi: 10.1103/PhysRevMaterials.3.084417
[21]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe)Sb. Appl Phys Express, 2018, 11, 063005 doi: 10.7567/APEX.11.063005
[22]	Nguyen T T, Pham N, Le D, et al. Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature. Appl Phys Lett, 2018, 112, 122409 doi: 10.1063/1.5022828
[23]	Nguyen T T, Pham N H, Le D A, et al. Heavily Fe-doped n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature and large magnetic anisotropy. 2019 Compound Semiconductor Week (CSW), Nara, Japan, 2019, 1 doi: 10.1109/ICIPRM.2019.8819236
[24]	Sakamoto S, Tu N T, Takeda Y, et al. Electronic structure of the high-T_C ferromagnetic semiconductor (Ga, Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies. Phys Rev B, 2019, 100, 035204 doi: 10.1103/PhysRevB.100.035204
[25]	Sriharsha K, Anh L D, Tu N T, et al. Magneto-optical spectra and the presence of an impurity band in p-type ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. APL Mater, 2019, 7, 021105 doi: 10.1063/1.5083175
[26]	Tanaka M. Recent progress in ferromagnetic semiconductors and spintronics devices. Jpn J Appl Phys, 2021, 60, 010101 doi: 10.35848/1347-4065/abcadc
[27]	Stefanowicz W, Śliwa C, Aleshkevych P, et al. Magnetic anisotropy of epitaxial (Ga, Mn)As on (113)A GaAs. Phys Rev B, 2010, 81, 155203 doi: 10.1103/PhysRevB.81.155203

Fig. 1. (Color online) (a) Schematic layer structure of Ga_1-x-yFe_xNi_ySb samples. (b) The RHEED pattern of an undoped GaSb sample. (c)−(f) RHEED patterns taken along the [110] azimuth after the growth of Ga_1-x-yFe_xNi_ySb layers for samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%).

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) XRD spectra of Ga_1-x-yFe_xNi_ySb samples A1−A4 (x = 25.2%−29.8%, y = 0). (b) XRD spectra of samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%). (c) x dependence of the lattice constant of A1−A4. (d) y dependence of the lattice constant of B1−B4.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) The cross-sectional STEM image of typical Ga_1-_x-yFe_xNi_ySb sample B4 (x = 24.3%, y = 6.1%). (b) SAED pattern of the Ga_1-_x-yFe_xNi_ySb layers in sample B4. (c) The area marked by red rectangles shown in Fig. 3(a).

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Magnetic hysteresis curves (M−H) measured at 10 K of samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%) with a magnetic field applied along the [001] axis and the [110] axis. The blue and red arrows in (a)−(d) signify the perpendicular saturation magnetic fields and the positions of H_S.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) The magnetic field dependence of Hall resistance curves (R_Hall−H) of the samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%) measured at 10 K.

DownLoad: Full-Size Img PowerPoint

Table 1. Curie temperature T_C, hole mobility μ at 10 K, saturation magnetization M_S and anisotropy constant K_u of Ga_1-x-yFe_xNi_ySb films with different Fe concentration x and Ni concentration y.

Sample	x (%)	y (%)	T_C (K)	μ (cm²/(V∙s))	M_S (emu/cc)	K_u (erg/cc)
A1	25.2	0	337	6.2	142	−1.8 × 10³
A2	26.9	0	351	3.4	144	1.2 × 10³
A3	28.0	0	362	1.9	147	4.5 ×10³
A4	29.8	0	375	1.1	151	7.6 ×10³
B1	23.7	1.7	319	31.3	148	−2.1 × 10³
B2	24.2	2.8	336	17.9	152	1.4 × 10⁵
B3	23.9	4.5	343	7.5	159	2.3 × 10⁵
B4	24.3	6.1	354	4.6	165	3.8 × 10⁵

DownLoad: CSV

[1]	Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281, 951 doi: 10.1126/science.281.5379.951
[2]	Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287, 1019 doi: 10.1126/science.287.5455.1019
[3]	Chiba D, Sawicki M, Nishitani Y, et al. Magnetization vector manipulation by electric fields. Nature, 2008, 455, 515 doi: 10.1038/nature07318
[4]	Jungwirth T, Wunderlich J, Novák V, et al. Spin-dependent phenomena and device concepts explored in (Ga, Mn)As. Rev Mod Phys, 2014, 86, 855 doi: 10.1103/RevModPhys.86.855
[5]	Dietl T, Ohno H. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 2014, 86, 187 doi: 10.1103/RevModPhys.86.187
[6]	Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors. Phys Rev Lett, 1992, 68, 2664 doi: 10.1103/PhysRevLett.68.2664
[7]	Koshihara S, Oiwa A, Hirasawa M, et al. Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In, Mn)As/GaSb. Phys Rev Lett, 1997, 78, 4617 doi: 10.1103/PhysRevLett.78.4617
[8]	Akai H. Ferromagnetism and its stability in the diluted magnetic semiconductor (In, Mn)As. Phys Rev Lett, 1998, 81, 3002 doi: 10.1103/PhysRevLett.81.3002
[9]	Oiwa A, Endo A, Katsumoto S, et al. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In, Mn)As/(Ga, Al)Sb. Phys Rev B, 1999, 59, 5826 doi: 10.1103/PhysRevB.59.5826
[10]	Schallenberg T, Munekata H. Preparation of ferromagnetic (In, Mn)As with a high Curie temperature of 90K. Appl Phys Lett, 2006, 89, 042507 doi: 10.1063/1.2236210
[11]	Ohno H, Shen A, Matsukura F, et al. (Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs. Appl Phys Lett, 1996, 69, 363 doi: 10.1063/1.118061
[12]	Matsukura F, Ohno H, Shen A, et al. Transport properties and origin of ferromagnetism in (Ga, Mn)As. Phys Rev B, 1998, 57, R2037 doi: 10.1103/PhysRevB.57.R2037
[13]	Chen L, Yang X, Yang F H, et al. Enhancing the curie temperature of ferromagnetic semiconductor (Ga, Mn)As to 200 K via nanostructure engineering. Nano Lett, 2011, 11, 2584 doi: 10.1021/nl201187m
[14]	Wang H L, Ma J L, Zhao J H. Giant modulation of magnetism in (Ga, Mn)As ultrathin films via electric field. J Semicond, 2019, 40, 092501 doi: 10.1088/1674-4926/40/9/092501
[15]	Wang H L, Ma J L, Wei Q Q, et al. Mn doping effects on the gate-tunable transport properties of Cd₃As₂ films epitaxied on GaAs. J Semicond, 2020, 41, 072903 doi: 10.1088/1674-4926/41/7/072903
[16]	Tu N T, Hai P N, Anh L D, et al. (Ga, Fe)Sb: A p-type ferromagnetic semiconductor. Appl Phys Lett, 2014, 105, 132402 doi: 10.1063/1.4896539
[17]	Tu N T, Hai P N, Anh L D, et al. Magnetic properties and intrinsic ferromagnetism in (Ga, Fe)Sb ferromagnetic semiconductors. Phys Rev B, 2015, 92, 144403 doi: 10.1103/PhysRevB.92.144403
[18]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb. Appl Phys Lett, 2016, 108, 192401 doi: 10.1063/1.4948692
[19]	Goel S, Anh L D, Ohya S, et al. Ferromagnetic resonance and control of magnetic anisotropy by epitaxial strain in the ferromagnetic semiconductor (Ga_0.8, Fe_0.2)Sb at room temperature. Phys Rev B, 2019, 99, 014431 doi: 10.1103/PhysRevB.99.014431
[20]	Goel S, Anh L D, Ohya S, et al. In-plane to perpendicular magnetic anisotropy switching in heavily-Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. Phys Rev Materials , 2019, 084417 doi: 10.1103/PhysRevMaterials.3.084417
[21]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe)Sb. Appl Phys Express, 2018, 11, 063005 doi: 10.7567/APEX.11.063005
[22]	Nguyen T T, Pham N, Le D, et al. Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature. Appl Phys Lett, 2018, 112, 122409 doi: 10.1063/1.5022828
[23]	Nguyen T T, Pham N H, Le D A, et al. Heavily Fe-doped n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature and large magnetic anisotropy. 2019 Compound Semiconductor Week (CSW), Nara, Japan, 2019, 1 doi: 10.1109/ICIPRM.2019.8819236
[24]	Sakamoto S, Tu N T, Takeda Y, et al. Electronic structure of the high-T_C ferromagnetic semiconductor (Ga, Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies. Phys Rev B, 2019, 100, 035204 doi: 10.1103/PhysRevB.100.035204
[25]	Sriharsha K, Anh L D, Tu N T, et al. Magneto-optical spectra and the presence of an impurity band in p-type ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. APL Mater, 2019, 7, 021105 doi: 10.1063/1.5083175
[26]	Tanaka M. Recent progress in ferromagnetic semiconductors and spintronics devices. Jpn J Appl Phys, 2021, 60, 010101 doi: 10.35848/1347-4065/abcadc
[27]	Stefanowicz W, Śliwa C, Aleshkevych P, et al. Magnetic anisotropy of epitaxial (Ga, Mn)As on (113)A GaAs. Phys Rev B, 2010, 81, 155203 doi: 10.1103/PhysRevB.81.155203

Supplementary_Information-23080008.pdf

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 768 Times PDF downloads: 66 Times Cited by: 0 Times

History

Received: 06 August 2023 Revised: 04 September 2023 Online: Accepted Manuscript: 10 November 2023Uncorrected proof: 20 December 2023Published: 10 January 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(1): 012101

Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb[J]. Journal of Semiconductors, 2024, 45(1): 012101. doi: 10.1088/1674-4926/45/1/012101 ****Z Deng, H L Wang, Q Q Wei, L Liu, H L Sun, D Pan, D H Wei, J H Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb[J]. J. Semicond, 2024, 45(1): 012101. doi: 10.1088/1674-4926/45/1/012101

Citation:

Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb[J]. Journal of Semiconductors, 2024, 45(1): 012101. doi: 10.1088/1674-4926/45/1/012101 ****

Z Deng, H L Wang, Q Q Wei, L Liu, H L Sun, D Pan, D H Wei, J H Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb[J]. J. Semicond, 2024, 45(1): 012101. doi: 10.1088/1674-4926/45/1/012101

Citation:

PDF( 6704 KB)

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

DOI: 10.1088/1674-4926/45/1/012101

Zhi Deng^{1, 2},
Hailong Wang^{1, 2,},
Qiqi Wei^{1, 2},
Lei Liu^{1, 2},
Hongli Sun^{1, 2},
Dong Pan^{1, 2},
Dahai Wei^{1, 2},
Jianhua Zhao^{1, 2}

1.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China

More Information

Zhi Deng obtained his B.E. degree from Center of Materials Science and Optoelectronics Engineering in 2020 at University of Chinese Academy of Sciences. He then joined the State Key Laboratory of Superlattices and Microstructures under the supervision of Prof. Jianhua Zhao. His research focuses on Fe-based Ⅲ−Ⅴ magnetic semiconductors
Hailong Wang received his B.Sc. degree from the School of Physics of Peking University in 2009, and a PhD degree from the University of Chinese Academy of Sciences in 2014. From 2014 to 2016, he was a postdoc at the Institute of Physics in Chinese Academy of Sciences, and then worked in the Institute of Semiconductors in Chinese Academy of Sciences. His current interests include Ⅲ−Ⅴ magnetic semiconductors, semiconductor two-dimensional electron gas and magnetic metal/semiconductor heterostructures
Corresponding author: allen@semi.ac.cn
Received Date: 2023-08-06
Revised Date: 2023-09-04

Available Online: 2023-11-10

Abstract

Abstract

(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T_C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K_u of (Ga,Fe)Sb is below 7.6 × 10³ erg/cm³ when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga_1-x-yFe_xNi_ySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga_0.76-yFe_0.24Ni_ySb can be enhanced by increasing y, in which K_u is negligible at y = 1.7% but increases to 3.8 × 10⁵ erg/cm³ at y = 6.1% (T_C = 354 K). In addition, the hole mobility (µ) of Ga_1-x-yFe_xNi_ySb reaches 31.3 cm²/(V∙s) at x = 23.7%, y = 1.7% (T_C = 319 K), which is much higher than the mobility of Ga_1-xFe_xSb at x = 25.2% (µ = 6.2 cm²/(V∙s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.
- magnetic semiconductor,
- molecular beam epitaxy,
- Fe-Ni co-doping,
- magnetic anisotropy,
- hole mobility

Supplementary materials to this article can be found online at https://doi.org/10.1088/1674-4926/45/1/012101.

FullText(HTML)

References(27)

References

[1]	Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281, 951 doi: 10.1126/science.281.5379.951
[2]	Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287, 1019 doi: 10.1126/science.287.5455.1019
[3]	Chiba D, Sawicki M, Nishitani Y, et al. Magnetization vector manipulation by electric fields. Nature, 2008, 455, 515 doi: 10.1038/nature07318
[4]	Jungwirth T, Wunderlich J, Novák V, et al. Spin-dependent phenomena and device concepts explored in (Ga, Mn)As. Rev Mod Phys, 2014, 86, 855 doi: 10.1103/RevModPhys.86.855
[5]	Dietl T, Ohno H. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 2014, 86, 187 doi: 10.1103/RevModPhys.86.187
[6]	Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors. Phys Rev Lett, 1992, 68, 2664 doi: 10.1103/PhysRevLett.68.2664
[7]	Koshihara S, Oiwa A, Hirasawa M, et al. Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In, Mn)As/GaSb. Phys Rev Lett, 1997, 78, 4617 doi: 10.1103/PhysRevLett.78.4617
[8]	Akai H. Ferromagnetism and its stability in the diluted magnetic semiconductor (In, Mn)As. Phys Rev Lett, 1998, 81, 3002 doi: 10.1103/PhysRevLett.81.3002
[9]	Oiwa A, Endo A, Katsumoto S, et al. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In, Mn)As/(Ga, Al)Sb. Phys Rev B, 1999, 59, 5826 doi: 10.1103/PhysRevB.59.5826
[10]	Schallenberg T, Munekata H. Preparation of ferromagnetic (In, Mn)As with a high Curie temperature of 90K. Appl Phys Lett, 2006, 89, 042507 doi: 10.1063/1.2236210
[11]	Ohno H, Shen A, Matsukura F, et al. (Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs. Appl Phys Lett, 1996, 69, 363 doi: 10.1063/1.118061
[12]	Matsukura F, Ohno H, Shen A, et al. Transport properties and origin of ferromagnetism in (Ga, Mn)As. Phys Rev B, 1998, 57, R2037 doi: 10.1103/PhysRevB.57.R2037
[13]	Chen L, Yang X, Yang F H, et al. Enhancing the curie temperature of ferromagnetic semiconductor (Ga, Mn)As to 200 K via nanostructure engineering. Nano Lett, 2011, 11, 2584 doi: 10.1021/nl201187m
[14]	Wang H L, Ma J L, Zhao J H. Giant modulation of magnetism in (Ga, Mn)As ultrathin films via electric field. J Semicond, 2019, 40, 092501 doi: 10.1088/1674-4926/40/9/092501
[15]	Wang H L, Ma J L, Wei Q Q, et al. Mn doping effects on the gate-tunable transport properties of Cd₃As₂ films epitaxied on GaAs. J Semicond, 2020, 41, 072903 doi: 10.1088/1674-4926/41/7/072903
[16]	Tu N T, Hai P N, Anh L D, et al. (Ga, Fe)Sb: A p-type ferromagnetic semiconductor. Appl Phys Lett, 2014, 105, 132402 doi: 10.1063/1.4896539
[17]	Tu N T, Hai P N, Anh L D, et al. Magnetic properties and intrinsic ferromagnetism in (Ga, Fe)Sb ferromagnetic semiconductors. Phys Rev B, 2015, 92, 144403 doi: 10.1103/PhysRevB.92.144403
[18]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb. Appl Phys Lett, 2016, 108, 192401 doi: 10.1063/1.4948692
[19]	Goel S, Anh L D, Ohya S, et al. Ferromagnetic resonance and control of magnetic anisotropy by epitaxial strain in the ferromagnetic semiconductor (Ga_0.8, Fe_0.2)Sb at room temperature. Phys Rev B, 2019, 99, 014431 doi: 10.1103/PhysRevB.99.014431
[20]	Goel S, Anh L D, Ohya S, et al. In-plane to perpendicular magnetic anisotropy switching in heavily-Fe-doped ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. Phys Rev Materials , 2019, 084417 doi: 10.1103/PhysRevMaterials.3.084417
[21]	Tu N T, Hai P N, Anh L D, et al. High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe)Sb. Appl Phys Express, 2018, 11, 063005 doi: 10.7567/APEX.11.063005
[22]	Nguyen T T, Pham N, Le D, et al. Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature. Appl Phys Lett, 2018, 112, 122409 doi: 10.1063/1.5022828
[23]	Nguyen T T, Pham N H, Le D A, et al. Heavily Fe-doped n-type ferromagnetic semiconductor (In, Fe)Sb with high Curie temperature and large magnetic anisotropy. 2019 Compound Semiconductor Week (CSW), Nara, Japan, 2019, 1 doi: 10.1109/ICIPRM.2019.8819236
[24]	Sakamoto S, Tu N T, Takeda Y, et al. Electronic structure of the high-T_C ferromagnetic semiconductor (Ga, Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies. Phys Rev B, 2019, 100, 035204 doi: 10.1103/PhysRevB.100.035204
[25]	Sriharsha K, Anh L D, Tu N T, et al. Magneto-optical spectra and the presence of an impurity band in p-type ferromagnetic semiconductor (Ga, Fe)Sb with high Curie temperature. APL Mater, 2019, 7, 021105 doi: 10.1063/1.5083175
[26]	Tanaka M. Recent progress in ferromagnetic semiconductors and spintronics devices. Jpn J Appl Phys, 2021, 60, 010101 doi: 10.35848/1347-4065/abcadc
[27]	Stefanowicz W, Śliwa C, Aleshkevych P, et al. Magnetic anisotropy of epitaxial (Ga, Mn)As on (113)A GaAs. Phys Rev B, 2010, 81, 155203 doi: 10.1103/PhysRevB.81.155203

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

DOI: 10.1088/1674-4926/45/1/012101

Abstract

References

Supplements

Proportional views

Catalog

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb

DOI: 10.1088/1674-4926/45/1/012101

Abstract

References

Supplements

Proportional views

Catalog

Export File

Citation

Format

Content

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb