Citation: |
Karolis Stašys, Andrejus Geižutis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101
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Karolis Stašys, Andrejus Geižutis, Jan Devenson, Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2), 022101 doi: 10.1088/1674-4926/45/2/022101
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Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers
DOI: 10.1088/1674-4926/45/2/022101
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Abstract
We introduce a novel method to create mid-infrared (MIR) thermal emitters using fully epitaxial, metal-free structures. Through the strategic use of epsilon-near-zero (ENZ) thin films in InAs layers, we achieve a narrow-band, wide-angle, and p-polarized thermal emission spectra. This approach, employing molecular beam epitaxy, circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths. Our findings contribute a promising route towards simpler, more efficient MIR optoelectronic devices. -
References
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