Chin. J. Semicond. > 1994, Volume 15 > Issue 7 > 501-504
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高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质

江若琏，刘建林，李海峰，郑厚植

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(7): 501-504
      江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质[J]. 半导体学报(英文版), 1994, 15(7): 501-504.
      Citation:
      江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si0.7Ge0.3／Si调制掺杂异质结构的生长和输运性质[J]. 半导体学报(英文版), 1994, 15(7): 501-504.
      shu

      • Received Date: 2015-08-18

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