Citation: |
Liu Xiaoyan, Liu Enfeng, Du Gang, Liu Yibo, Xia Zhiliang, Han Ruqi. Device Simulation for Nanoscale MOSFET[J]. Journal of Semiconductors, 2003, 24(S1): 148-152.
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Liu X Y, Liu E F, Du G, Liu Y B, Xia Z L, Han R Q. Device Simulation for Nanoscale MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 148.
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Device Simulation for Nanoscale MOSFET
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Abstract
A novel scheme for incorporating quantum effect in classical hydrodynamic model is proposed. No additional Equations are needed to solve quantum potential with this scheme, so the complexity ofEquations is largely reduced. Based on this, a HD simulation program is developed. The 25nm gate length MOSFET and 30nm FinFET are simulated. -
References
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