Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 897-902

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多晶发射极双台面微波功率SiGe HBT(英文)

刘志农 , 熊小义 , 黄文韬 , 李高庆 , 张伟 , 许军 , 刘志弘 , 林惠旺 , 许平 , 陈培毅 and 钱佩信

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Key words: 锗硅, 异质结双极晶体管, 微波功率放大器

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 897-902
      刘志农, 熊小义, 黄文韬, 李高庆, 张伟, 许军, 刘志弘, 林惠旺, 许平, 陈培毅, 钱佩信. 多晶发射极双台面微波功率SiGe HBT(英文)[J]. 半导体学报(英文版), 2003, 24(9): 897-902.
      Citation:
      刘志农, 熊小义, 黄文韬, 李高庆, 张伟, 许军, 刘志弘, 林惠旺, 许平, 陈培毅, 钱佩信. 多晶发射极双台面微波功率SiGe HBT(英文)[J]. 半导体学报(英文版), 2003, 24(9): 897-902.
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      • Received Date: 2015-08-20

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