Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 877-880

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计入多晶硅耗尽效应的深亚微米MOSFET开启电压模型

张文良 and 杨之廉

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 877-880
      张文良, 杨之廉. 计入多晶硅耗尽效应的深亚微米MOSFET开启电压模型[J]. 半导体学报(英文版), 1997, 18(11): 877-880.
      Citation:
      张文良, 杨之廉. 计入多晶硅耗尽效应的深亚微米MOSFET开启电压模型[J]. 半导体学报(英文版), 1997, 18(11): 877-880.
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      • Received Date: 2015-08-19

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