Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 449-454

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深亚微米MOS器件中栅介质层的直接隧穿电流(英文)

侯永田 , 李名复 and 金鹰

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Key words: MOSFET, 直接隧穿电流, 量子效应, 栅介质层

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 449-454
      侯永田, 李名复, 金鹰. 深亚微米MOS器件中栅介质层的直接隧穿电流(英文)[J]. 半导体学报(英文版), 2002, 23(5): 449-454.
      Citation:
      侯永田, 李名复, 金鹰. 深亚微米MOS器件中栅介质层的直接隧穿电流(英文)[J]. 半导体学报(英文版), 2002, 23(5): 449-454.
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      • Received Date: 2015-08-19

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