Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 33-39
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H_2、N_2气氛下热处理对磷离子注入多晶硅电阻的影响

戴福根 , 张继盛 , 李维中 and 林月凤

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 33-39
      戴福根, 张继盛, 李维中, 林月凤. H_2、N_2气氛下热处理对磷离子注入多晶硅电阻的影响[J]. 半导体学报(英文版), 1984, 5(1): 33-39.
      Citation:
      戴福根, 张继盛, 李维中, 林月凤. H_2、N_2气氛下热处理对磷离子注入多晶硅电阻的影响[J]. 半导体学报(英文版), 1984, 5(1): 33-39.
      shu

      • Received Date: 2015-08-20

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