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Characteristics of Groove-Gate MOSFETs

Cao Yanrong, Ma Xiaohua, Hao Yue and Yu Lei

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Abstract: The groove- and planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO,and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects.From the analysis of the field,we find that due to the corner effect,the performance of groove-gate MOSFETs is better than that of the planar.The groove-gate MOSFETs with 140nm channel length fabricated with a self-aligned process are tested,and the results effectively show the superiority of the groove-gate MOSFETs over the planar.

Key words: self-aligned, groove-gate MOSFETs, short channel effects, hot carries effects, corner effect

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    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(11): 1994-1999
      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei. Characteristics of Groove-Gate MOSFETs[J]. Journal of Semiconductors, 2006, 27(11): 1994-1999. ****Cao Y R, Ma X H, Hao Y, Yu L. Characteristics of Groove-Gate MOSFETs[J]. Chin. J. Semicond., 2006, 27(11): 1994.
      Citation:
      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei. Characteristics of Groove-Gate MOSFETs[J]. Journal of Semiconductors, 2006, 27(11): 1994-1999. ****
      Cao Y R, Ma X H, Hao Y, Yu L. Characteristics of Groove-Gate MOSFETs[J]. Chin. J. Semicond., 2006, 27(11): 1994.
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      Characteristics of Groove-Gate MOSFETs

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

      • Received Date: 2015-08-18

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