| Citation: |
Lin Hongfeng, 谢二庆, Xie Erqing, Zhang Jun, Yan Xiaoqin. Field Emission from Reaction Sputtering CN Films[J]. Journal of Semiconductors, 2006, 27(S1): 211-213.
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Lin H F, Xie E Q, Zhang J, Yan X Q. Field Emission from Reaction Sputtering CN Films[J]. Chin. J. Semicond., 2006, 27(13): 211.
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Field Emission from Reaction Sputtering CN Films
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Abstract
Carbon nitride (CN) films are deposited with reaction sputtering method.Nano-cone arrays are formed and distributed large areas on the surface of CN films with this method.CN films show excellent field emission behavior with a current density ～10mA/cm2 at 15.5V/μm due to their unique geometrical configurations.The field emission properties of the CN films can also be meliorated through circular survey experiments,which may lead to CN films be a great potential cold cathode materials for future field emission display.-
Keywords:
- reaction sputtering,
- CN films,
- field emission
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References
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Proportional views
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