Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 408-413
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表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响

郜锦侠 , 张义门 , 张玉明 and 汤晓燕

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Key words: SiC, PMOS, 界面态, 阈值电压, 源漏电阻

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 408-413
      郜锦侠, 张义门, 张玉明, 汤晓燕. 表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响[J]. 半导体学报(英文版), 2002, 23(4): 408-413.
      Citation:
      郜锦侠, 张义门, 张玉明, 汤晓燕. 表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响[J]. 半导体学报(英文版), 2002, 23(4): 408-413.
      shu

      • Received Date: 2015-08-19

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