Chin. J. Semicond. > 1996, Volume 17 > Issue 10 > 775-779

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1996

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      李观启,黄美浅,曾绍鸿,曾旭. Ar~+背面轰击对SiO_xN_y栅介质的n-MOSFET迁移率和跨导的影响[J]. 半导体学报(英文版), 1996, 17(10): 775-779.
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      李观启,黄美浅,曾绍鸿,曾旭. Ar~+背面轰击对SiO_xN_y栅介质的n-MOSFET迁移率和跨导的影响[J]. 半导体学报(英文版), 1996, 17(10): 775-779.

      • Received Date: 2015-08-18

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