Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 428-433
|

CONTENTS

低能电子束照射集成电路芯片时的静态电容衬度分析

冯仁剑 , 张海波 and Katsumi URA

+ Author Affiliations

PDF

Key words: 电子照射, 绝缘物带电, 二次电子, 电容衬度, 扫描电镜, 集成电路检测

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2636 Times PDF downloads: 1349 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 428-433
      冯仁剑, 张海波, Katsumi URA. 低能电子束照射集成电路芯片时的静态电容衬度分析[J]. 半导体学报(英文版), 2002, 23(4): 428-433.
      Citation:
      冯仁剑, 张海波, Katsumi URA. 低能电子束照射集成电路芯片时的静态电容衬度分析[J]. 半导体学报(英文版), 2002, 23(4): 428-433.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return