Chin. J. Semicond. > 1983, Volume 4 > Issue 1 > 69-77
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用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态

杜瑞瑞 , 孙恒慧 and 董国胜

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(1): 69-77
      杜瑞瑞, 孙恒慧, 董国胜. 用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态[J]. 半导体学报(英文版), 1983, 4(1): 69-77.
      Citation:
      杜瑞瑞, 孙恒慧, 董国胜. 用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态[J]. 半导体学报(英文版), 1983, 4(1): 69-77.
      shu

      • Received Date: 2015-08-20

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