Journal of Semiconductors

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Volume 4, Issue 1, Jan 1983

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CONTENTS

赝原子轨道集团方法计算Si和GaAs中的空位

夏建白

Chin. J. Semicond. 1983, 4(1): 1-9

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null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 1.

夏建白. 赝原子轨道集团方法计算Si和GaAs中的空位[J]. Chin. J. Semicond., 1983, 4(1): 1..Export: BibTex EndNote

夏建白. 赝原子轨道集团方法计算Si和GaAs中的空位[J]. Chin. J. Semicond., 1983, 4(1): 1...

键环作用对四面体配位半导体的电子态密度的影响

徐家进, 莫党

Chin. J. Semicond. 1983, 4(1): 10-19

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 10.

徐家进, 莫党. 键环作用对四面体配位半导体的电子态密度的影响[J]. Chin. J. Semicond., 1983, 4(1): 10..Export: BibTex EndNote

徐家进, 莫党. 键环作用对四面体配位半导体的电子态密度的影响[J]. Chin. J. Semicond., 1983, 4(1): 10...

代位式碳在硅单晶中的局域模与红外吸收

陈畅生, 张哲华, 叶亦英

Chin. J. Semicond. 1983, 4(1): 20-28

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 20.

陈畅生, 张哲华, 叶亦英. 代位式碳在硅单晶中的局域模与红外吸收[J]. Chin. J. Semicond., 1983, 4(1): 20..Export: BibTex EndNote

陈畅生, 张哲华, 叶亦英. 代位式碳在硅单晶中的局域模与红外吸收[J]. Chin. J. Semicond., 1983, 4(1): 20...

高掺杂半导体中补偿程度和注入水平对带尾结构的影响

郭长志, 李国华

Chin. J. Semicond. 1983, 4(1): 29-36

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 29.

郭长志, 李国华. 高掺杂半导体中补偿程度和注入水平对带尾结构的影响[J]. Chin. J. Semicond., 1983, 4(1): 29..Export: BibTex EndNote

郭长志, 李国华. 高掺杂半导体中补偿程度和注入水平对带尾结构的影响[J]. Chin. J. Semicond., 1983, 4(1): 29...

氧化膜/InGaAsP界面物理性质的研究

陈克铭, 仇兰华, 陈维德

Chin. J. Semicond. 1983, 4(1): 37-46

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 37.

陈克铭, 仇兰华, 陈维德. 氧化膜/InGaAsP界面物理性质的研究[J]. Chin. J. Semicond., 1983, 4(1): 37..Export: BibTex EndNote

陈克铭, 仇兰华, 陈维德. 氧化膜/InGaAsP界面物理性质的研究[J]. Chin. J. Semicond., 1983, 4(1): 37...

非均匀半导体激光器传输特性的理论分析

单永政, 杜宝勋

Chin. J. Semicond. 1983, 4(1): 47-55

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 47.

单永政, 杜宝勋. 非均匀半导体激光器传输特性的理论分析[J]. Chin. J. Semicond., 1983, 4(1): 47..Export: BibTex EndNote

单永政, 杜宝勋. 非均匀半导体激光器传输特性的理论分析[J]. Chin. J. Semicond., 1983, 4(1): 47...

离子注入硅片的CWCO_2激光退火固相外延模型

沈金萱, 屈逢源

Chin. J. Semicond. 1983, 4(1): 56-63

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 56.

沈金萱, 屈逢源. 离子注入硅片的CWCO_2激光退火固相外延模型[J]. Chin. J. Semicond., 1983, 4(1): 56..Export: BibTex EndNote

沈金萱, 屈逢源. 离子注入硅片的CWCO_2激光退火固相外延模型[J]. Chin. J. Semicond., 1983, 4(1): 56...

Al-SiO_2-Si(n)系统的电子辐照效应

包宗明, 张秀淼, 杨恒青, 张增光

Chin. J. Semicond. 1983, 4(1): 64-68

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 64.

包宗明, 张秀淼, 杨恒青, 张增光. Al-SiO_2-Si(n)系统的电子辐照效应[J]. Chin. J. Semicond., 1983, 4(1): 64..Export: BibTex EndNote

包宗明, 张秀淼, 杨恒青, 张增光. Al-SiO_2-Si(n)系统的电子辐照效应[J]. Chin. J. Semicond., 1983, 4(1): 64...

用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态

杜瑞瑞, 孙恒慧, 董国胜

Chin. J. Semicond. 1983, 4(1): 69-77

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 69.

杜瑞瑞, 孙恒慧, 董国胜. 用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态[J]. Chin. J. Semicond., 1983, 4(1): 69..Export: BibTex EndNote

杜瑞瑞, 孙恒慧, 董国胜. 用真空紫外辐照研究Si-SiO_2界面的氧化层陷阱和界面态[J]. Chin. J. Semicond., 1983, 4(1): 69...

用AES及椭偏仪研究硅上超薄氧化层

张家慰, 赵正平

Chin. J. Semicond. 1983, 4(1): 78-80

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 78.

张家慰, 赵正平. 用AES及椭偏仪研究硅上超薄氧化层[J]. Chin. J. Semicond., 1983, 4(1): 78..Export: BibTex EndNote

张家慰, 赵正平. 用AES及椭偏仪研究硅上超薄氧化层[J]. Chin. J. Semicond., 1983, 4(1): 78...

9微来红外吸收法测定硅单晶中氧含量的标定曲线

李月珍, 何焕南, 赵关弟, 严荣华, 吕庆仁, 祁明维, 章家鼎, 华芝芬

Chin. J. Semicond. 1983, 4(1): 81-85

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 81.

李月珍, 何焕南, 赵关弟, 严荣华, 吕庆仁, 祁明维, 章家鼎, 华芝芬. 9微来红外吸收法测定硅单晶中氧含量的标定曲线[J]. Chin. J. Semicond., 1983, 4(1): 81..Export: BibTex EndNote

李月珍, 何焕南, 赵关弟, 严荣华, 吕庆仁, 祁明维, 章家鼎, 华芝芬. 9微来红外吸收法测定硅单晶中氧含量的标定曲线[J]. Chin. J. Semicond., 1983, 4(1): 81...

光荧光法测定硅中磷、硼含量

孟庆惠, 于鲲, 李永康, 许振嘉, 陈廷杰, 吴灵犀, 徐寿定

Chin. J. Semicond. 1983, 4(1): 86-89

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 86.

孟庆惠, 于鲲, 李永康, 许振嘉, 陈廷杰, 吴灵犀, 徐寿定. 光荧光法测定硅中磷、硼含量[J]. Chin. J. Semicond., 1983, 4(1): 86..Export: BibTex EndNote

孟庆惠, 于鲲, 李永康, 许振嘉, 陈廷杰, 吴灵犀, 徐寿定. 光荧光法测定硅中磷、硼含量[J]. Chin. J. Semicond., 1983, 4(1): 86...

一神光掩模缺陷检查技术

傅丽珍, 王家楫

Chin. J. Semicond. 1983, 4(1): 90-92

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 90.

傅丽珍, 王家楫. 一神光掩模缺陷检查技术[J]. Chin. J. Semicond., 1983, 4(1): 90..Export: BibTex EndNote

傅丽珍, 王家楫. 一神光掩模缺陷检查技术[J]. Chin. J. Semicond., 1983, 4(1): 90...

液相外延生长的Al_xGa_(1-X)As中Al组分分布及少子扩散长度的研究

刘宏勋, 陈娓兮, 虞丽生

Chin. J. Semicond. 1983, 4(1): 93-96

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 93.

刘宏勋, 陈娓兮, 虞丽生. 液相外延生长的Al_xGa_(1-X)As中Al组分分布及少子扩散长度的研究[J]. Chin. J. Semicond., 1983, 4(1): 93..Export: BibTex EndNote

刘宏勋, 陈娓兮, 虞丽生. 液相外延生长的Al_xGa_(1-X)As中Al组分分布及少子扩散长度的研究[J]. Chin. J. Semicond., 1983, 4(1): 93...

反应离子束刻蚀及其应用

金维新, 孟宪光, 尤大伟, 胥兴才

Chin. J. Semicond. 1983, 4(1): 97-100

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 97.

金维新, 孟宪光, 尤大伟, 胥兴才. 反应离子束刻蚀及其应用[J]. Chin. J. Semicond., 1983, 4(1): 97..Export: BibTex EndNote

金维新, 孟宪光, 尤大伟, 胥兴才. 反应离子束刻蚀及其应用[J]. Chin. J. Semicond., 1983, 4(1): 97...

InGaAsP/InP双异质结发光管光功率的温度和饱和特性

张桂成, 水海龙

Chin. J. Semicond. 1983, 4(1): 101-104

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(1): 101.

张桂成, 水海龙. InGaAsP/InP双异质结发光管光功率的温度和饱和特性[J]. Chin. J. Semicond., 1983, 4(1): 101..Export: BibTex EndNote

张桂成, 水海龙. InGaAsP/InP双异质结发光管光功率的温度和饱和特性[J]. Chin. J. Semicond., 1983, 4(1): 101...

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