Chin. J. Semicond. > 1983, Volume 4 > Issue 1 > 37-46
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氧化膜/InGaAsP界面物理性质的研究

陈克铭 , 仇兰华 and 陈维德

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(1): 37-46
      陈克铭, 仇兰华, 陈维德. 氧化膜/InGaAsP界面物理性质的研究[J]. 半导体学报(英文版), 1983, 4(1): 37-46.
      Citation:
      陈克铭, 仇兰华, 陈维德. 氧化膜/InGaAsP界面物理性质的研究[J]. 半导体学报(英文版), 1983, 4(1): 37-46.
      shu

      • Received Date: 2015-08-20

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