Chin. J. Semicond. > 1983, Volume 4 > Issue 1 > 29-36
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高掺杂半导体中补偿程度和注入水平对带尾结构的影响

郭长志 and 李国华

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(1): 29-36
      郭长志, 李国华. 高掺杂半导体中补偿程度和注入水平对带尾结构的影响[J]. 半导体学报(英文版), 1983, 4(1): 29-36.
      Citation:
      郭长志, 李国华. 高掺杂半导体中补偿程度和注入水平对带尾结构的影响[J]. 半导体学报(英文版), 1983, 4(1): 29-36.
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      • Received Date: 2015-08-20

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