Chin. J. Semicond. > 1983, Volume 4 > Issue 1 > 78-80
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用AES及椭偏仪研究硅上超薄氧化层

张家慰 and 赵正平

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(1): 78-80
      张家慰, 赵正平. 用AES及椭偏仪研究硅上超薄氧化层[J]. 半导体学报(英文版), 1983, 4(1): 78-80.
      Citation:
      张家慰, 赵正平. 用AES及椭偏仪研究硅上超薄氧化层[J]. 半导体学报(英文版), 1983, 4(1): 78-80.
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      • Received Date: 2015-08-20

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