Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 685-689
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应变Si沟道异质结NMOS晶体管(英文)

史进 , 黄文涛 and 陈培毅

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Key words: 应变, SiGe, 跨导, 迁移率

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 685-689
      史进, 黄文涛, 陈培毅. 应变Si沟道异质结NMOS晶体管(英文)[J]. 半导体学报(英文版), 2002, 23(7): 685-689.
      Citation:
      史进, 黄文涛, 陈培毅. 应变Si沟道异质结NMOS晶体管(英文)[J]. 半导体学报(英文版), 2002, 23(7): 685-689.
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      • Received Date: 2015-08-19

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