Chin. J. Semicond. > 1983, Volume 4 > Issue 3 > 265-274
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GaAlAs/GaAs DH激光器发光位置的实验研究

单振国

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(3): 265-274
      单振国. GaAlAs/GaAs DH激光器发光位置的实验研究[J]. 半导体学报(英文版), 1983, 4(3): 265-274.
      Citation:
      单振国. GaAlAs/GaAs DH激光器发光位置的实验研究[J]. 半导体学报(英文版), 1983, 4(3): 265-274.
      shu

      • Received Date: 2015-08-20

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