Journal of Semiconductors

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Volume 4, Issue 3, Mar 1983

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CONTENTS

极性半导体表面激子结合能

梁希侠

Chin. J. Semicond. 1983, 4(3): 209-214

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 209.

梁希侠. 极性半导体表面激子结合能[J]. Chin. J. Semicond., 1983, 4(3): 209..Export: BibTex EndNote

梁希侠. 极性半导体表面激子结合能[J]. Chin. J. Semicond., 1983, 4(3): 209...

极性晶体中的激子在磁场中的性质

庞乾骏

Chin. J. Semicond. 1983, 4(3): 215-224

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 215.

庞乾骏. 极性晶体中的激子在磁场中的性质[J]. Chin. J. Semicond., 1983, 4(3): 215..Export: BibTex EndNote

庞乾骏. 极性晶体中的激子在磁场中的性质[J]. Chin. J. Semicond., 1983, 4(3): 215...

GaAs(110)面氧吸附的研究

张开明, 叶令

Chin. J. Semicond. 1983, 4(3): 225-229

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 225.

张开明, 叶令. GaAs(110)面氧吸附的研究[J]. Chin. J. Semicond., 1983, 4(3): 225..Export: BibTex EndNote

张开明, 叶令. GaAs(110)面氧吸附的研究[J]. Chin. J. Semicond., 1983, 4(3): 225...

n-InSb的纵向磁阻振荡

傅柔励, 郑国珍, 汤定元

Chin. J. Semicond. 1983, 4(3): 230-238

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 230.

傅柔励, 郑国珍, 汤定元. n-InSb的纵向磁阻振荡[J]. Chin. J. Semicond., 1983, 4(3): 230..Export: BibTex EndNote

傅柔励, 郑国珍, 汤定元. n-InSb的纵向磁阻振荡[J]. Chin. J. Semicond., 1983, 4(3): 230...

半导体Ga_(1-x)Al_xAs/GaAs DH激光器张弛振荡效应的实验研究

赵礼庆, 张存善, 唐政, 王启明

Chin. J. Semicond. 1983, 4(3): 239-246

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 239.

赵礼庆, 张存善, 唐政, 王启明. 半导体Ga_(1-x)Al_xAs/GaAs DH激光器张弛振荡效应的实验研究[J]. Chin. J. Semicond., 1983, 4(3): 239..Export: BibTex EndNote

赵礼庆, 张存善, 唐政, 王启明. 半导体Ga_(1-x)Al_xAs/GaAs DH激光器张弛振荡效应的实验研究[J]. Chin. J. Semicond., 1983, 4(3): 239...

半导体激光器的多模行为和自发发射因子及其对瞬态过程的影响

郭长志, 钮金真

Chin. J. Semicond. 1983, 4(3): 247-256

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 247.

郭长志, 钮金真. 半导体激光器的多模行为和自发发射因子及其对瞬态过程的影响[J]. Chin. J. Semicond., 1983, 4(3): 247..Export: BibTex EndNote

郭长志, 钮金真. 半导体激光器的多模行为和自发发射因子及其对瞬态过程的影响[J]. Chin. J. Semicond., 1983, 4(3): 247...

高掺杂半导体中带尾结构对自发复合过程的影响

郭长志, 李国华

Chin. J. Semicond. 1983, 4(3): 257-264

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 257.

郭长志, 李国华. 高掺杂半导体中带尾结构对自发复合过程的影响[J]. Chin. J. Semicond., 1983, 4(3): 257..Export: BibTex EndNote

郭长志, 李国华. 高掺杂半导体中带尾结构对自发复合过程的影响[J]. Chin. J. Semicond., 1983, 4(3): 257...

GaAlAs/GaAs DH激光器发光位置的实验研究

单振国

Chin. J. Semicond. 1983, 4(3): 265-274

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 265.

单振国. GaAlAs/GaAs DH激光器发光位置的实验研究[J]. Chin. J. Semicond., 1983, 4(3): 265..Export: BibTex EndNote

单振国. GaAlAs/GaAs DH激光器发光位置的实验研究[J]. Chin. J. Semicond., 1983, 4(3): 265...

表面栅静电感应晶体管沿沟道中心线电势分布的解析分析

仲玉林, 亢宝位

Chin. J. Semicond. 1983, 4(3): 275-283

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 275.

仲玉林, 亢宝位. 表面栅静电感应晶体管沿沟道中心线电势分布的解析分析[J]. Chin. J. Semicond., 1983, 4(3): 275..Export: BibTex EndNote

仲玉林, 亢宝位. 表面栅静电感应晶体管沿沟道中心线电势分布的解析分析[J]. Chin. J. Semicond., 1983, 4(3): 275...

GaAs(100)和InP(100)面上表面光学声子的实验观察

丁训民, 董国胜, 杨曙, 王迅, 徐亚伯

Chin. J. Semicond. 1983, 4(3): 284-286

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 284.

丁训民, 董国胜, 杨曙, 王迅, 徐亚伯. GaAs(100)和InP(100)面上表面光学声子的实验观察[J]. Chin. J. Semicond., 1983, 4(3): 284..Export: BibTex EndNote

丁训民, 董国胜, 杨曙, 王迅, 徐亚伯. GaAs(100)和InP(100)面上表面光学声子的实验观察[J]. Chin. J. Semicond., 1983, 4(3): 284...

绝缘衬底上硅膜的激光侧向外延

林惠旺, 钱佩信, 马腾阁, 李志坚

Chin. J. Semicond. 1983, 4(3): 287-290

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 287.

林惠旺, 钱佩信, 马腾阁, 李志坚. 绝缘衬底上硅膜的激光侧向外延[J]. Chin. J. Semicond., 1983, 4(3): 287..Export: BibTex EndNote

林惠旺, 钱佩信, 马腾阁, 李志坚. 绝缘衬底上硅膜的激光侧向外延[J]. Chin. J. Semicond., 1983, 4(3): 287...

In_(1-x)Ga_xAs_yP_(1-y)/InP DH化学腐蚀腔面激光器

段树坤, 石忠诚, 李静然, 吕卉, 王丽明, 孙富荣

Chin. J. Semicond. 1983, 4(3): 291-294

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 291.

段树坤, 石忠诚, 李静然, 吕卉, 王丽明, 孙富荣. In_(1-x)Ga_xAs_yP_(1-y)/InP DH化学腐蚀腔面激光器[J]. Chin. J. Semicond., 1983, 4(3): 291..Export: BibTex EndNote

段树坤, 石忠诚, 李静然, 吕卉, 王丽明, 孙富荣. In_(1-x)Ga_xAs_yP_(1-y)/InP DH化学腐蚀腔面激光器[J]. Chin. J. Semicond., 1983, 4(3): 291...

重结硅光电二极管

尹长松, 朱德光, 石端云, 赵有伦, 胡淑纯

Chin. J. Semicond. 1983, 4(3): 295-297

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 295.

尹长松, 朱德光, 石端云, 赵有伦, 胡淑纯. 重结硅光电二极管[J]. Chin. J. Semicond., 1983, 4(3): 295..Export: BibTex EndNote

尹长松, 朱德光, 石端云, 赵有伦, 胡淑纯. 重结硅光电二极管[J]. Chin. J. Semicond., 1983, 4(3): 295...

HCl氧化物MOS结构中钠离子的钝化

陆德仁, 王缨, 王其闵

Chin. J. Semicond. 1983, 4(3): 298-301

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 298.

陆德仁, 王缨, 王其闵. HCl氧化物MOS结构中钠离子的钝化[J]. Chin. J. Semicond., 1983, 4(3): 298..Export: BibTex EndNote

陆德仁, 王缨, 王其闵. HCl氧化物MOS结构中钠离子的钝化[J]. Chin. J. Semicond., 1983, 4(3): 298...

GD Si:H薄膜的结构和电传导性质

沈宗雍, 吴汝麟, 何宇亮

Chin. J. Semicond. 1983, 4(3): 302-305

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 302.

沈宗雍, 吴汝麟, 何宇亮. GD Si:H薄膜的结构和电传导性质[J]. Chin. J. Semicond., 1983, 4(3): 302..Export: BibTex EndNote

沈宗雍, 吴汝麟, 何宇亮. GD Si:H薄膜的结构和电传导性质[J]. Chin. J. Semicond., 1983, 4(3): 302...

电流扩展效应对氧化物条形激光器阈值的影响

杜国同, 全宝富, 邓希敏, 苗忠礼, 高鼎三

Chin. J. Semicond. 1983, 4(3): 306-309

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 306.

杜国同, 全宝富, 邓希敏, 苗忠礼, 高鼎三. 电流扩展效应对氧化物条形激光器阈值的影响[J]. Chin. J. Semicond., 1983, 4(3): 306..Export: BibTex EndNote

杜国同, 全宝富, 邓希敏, 苗忠礼, 高鼎三. 电流扩展效应对氧化物条形激光器阈值的影响[J]. Chin. J. Semicond., 1983, 4(3): 306...

一种用非晶硅作绝缘材料的MISS器件

王万录

Chin. J. Semicond. 1983, 4(3): 310-312

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1983, 4(3): 310.

王万录. 一种用非晶硅作绝缘材料的MISS器件[J]. Chin. J. Semicond., 1983, 4(3): 310..Export: BibTex EndNote

王万录. 一种用非晶硅作绝缘材料的MISS器件[J]. Chin. J. Semicond., 1983, 4(3): 310...

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