Chin. J. Semicond. > 1983, Volume 4 > Issue 3 > 298-301
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HCl氧化物MOS结构中钠离子的钝化

陆德仁 , 王缨 and 王其闵

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(3): 298-301
      陆德仁, 王缨, 王其闵. HCl氧化物MOS结构中钠离子的钝化[J]. 半导体学报(英文版), 1983, 4(3): 298-301.
      Citation:
      陆德仁, 王缨, 王其闵. HCl氧化物MOS结构中钠离子的钝化[J]. 半导体学报(英文版), 1983, 4(3): 298-301.
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      • Received Date: 2015-08-20

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