Abstract: Polycrystalline Si1-xGex thin film is deposited on n-Si(100) and SiO2 substrates respectively by ion beam sputtering.The Ge fraction in the Si1-xGexlayer is determined to be 0.15～0.16 by Auger electron spectroscopy.The samples are annealed in a conventional furnace at different temperatures for different durations to investigate temperature and time effects on crystallinity.Phase identification is performed by X-ray diffractometry.It is found that the Si1-xGexfilm has a higher crystallinity on n-Si than on SiO2 under identical annealing conditions.The dependences of the average grain size on annealing temperature and time are exponential and parabolic functions, respectively,as determined by curve fitting.Thus the crystallization process of ion beam sputtered Si1-xGex film may be controlled by grain growth.

Key words: poly-Si1-xGex, ion-beam-sputtering deposition, furnace annealing, grain growth, semiconductor materials