Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 715-719
|

CONTENTS

DMOS阈值电压二维模型

李泽宏 , 张波 , 李肇基 , 方健 and 杨舰

+ Author Affiliations

PDF

Key words: double-diffusion MOSFET, 阈值电压, 二维阈值电压模型

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2114 Times PDF downloads: 1122 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 715-719
      李泽宏, 张波, 李肇基, 方健, 杨舰. DMOS阈值电压二维模型[J]. 半导体学报(英文版), 2004, 25(6): 715-719.
      Citation:
      李泽宏, 张波, 李肇基, 方健, 杨舰. DMOS阈值电压二维模型[J]. 半导体学报(英文版), 2004, 25(6): 715-719.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return