Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1215-1220
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一种适用于短沟道LDD MOSFET参数提取的改进方法(英文)

于春利 , 郝跃 and 杨林安

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Key words: 轻掺杂漏MOSFET, 参数提取, 寄生串联电阻, 迁移率

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1215-1220
      于春利, 郝跃, 杨林安. 一种适用于短沟道LDD MOSFET参数提取的改进方法(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1215-1220.
      Citation:
      于春利, 郝跃, 杨林安. 一种适用于短沟道LDD MOSFET参数提取的改进方法(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1215-1220.
      shu

      • Received Date: 2015-08-19

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