| Citation: |
Li Ti, Pan Huapu, Xu Ke, Hu Xiaodong. Optimization of the Electron Blocking Layer in GaN Laser Diodes[J]. Journal of Semiconductors, 2006, 27(8): 1458-1462.
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Li T, Pan H P, Xu K, Hu X D. Optimization of the Electron Blocking Layer in GaN Laser Diodes[J]. Chin. J. Semicond., 2006, 27(8): 1458.
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Optimization of the Electron Blocking Layer in GaN Laser Diodes
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Abstract
In view of the transport mechanism of electrical carriers,the factors involved in the current overflow in GaN-based laser diodes are analyzed,and the aluminum mole fraction as well as the p-doping concentration of the AlGaN electron blocking layer are optimized.The results indicate that the appropriate barrier height (the Al mole fraction) is lower when the p-doping concentration is higher.-
Keywords:
- semiconductor laser diode,
- GaN,
- AlGaN,
- electron blocking layer
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References
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Proportional views
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