微尖场致发射三极管的FDM-NOCCS算法模拟

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1	Hot-carrier reliability in OPTVLD-LDMOS Cheng Junji, Chen Xingbi Journal of Semiconductors, 2012, 33(6): 064003. doi: 10.1088/1674-4926/33/6/064003
2	Universal trench design method for a high-voltage SOI trench LDMOS Hu Xiarong, Zhang Bo, Luo Xiaorong, Li Zhaoji Journal of Semiconductors, 2012, 33(7): 074006. doi: 10.1088/1674-4926/33/7/074006
3	A new high voltage SOI LDMOS with triple RESURF structure Hu Xiarong, Zhang Bo, Luo Xiaorong, Yao Guoliang, Chen Xi, et al. Journal of Semiconductors, 2011, 32(7): 074006. doi: 10.1088/1674-4926/32/7/074006
4	A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system Li Bing, Zhuang Yiqi, Li Zhenrong, Jin Gang Journal of Semiconductors, 2010, 31(12): 125001. doi: 10.1088/1674-4926/31/12/125001
5	A high-performance low-power CMOS AGC for GPS application Lei Qianqian, Xu Qiming, Chen Zhiming, Shi Yin, Lin Min, et al. Journal of Semiconductors, 2010, 31(2): 025005. doi: 10.1088/1674-4926/31/2/025005
6	A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS Hao Mingli, Shi Yin Journal of Semiconductors, 2010, 31(1): 015004. doi: 10.1088/1674-4926/31/1/015004
7	A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers Han Kefeng, Cao Shengguo, Tan Xi, Yan Na, Wang Junyu, et al. Journal of Semiconductors, 2010, 31(12): 125005. doi: 10.1088/1674-4926/31/12/125005
8	An ultra-low-power CMOS temperature sensor for RFID applications Xu Conghui, Gao Peijun, Che Wenyi, Tan Xi, Yan Na , et al. Journal of Semiconductors, 2009, 30(4): 045003. doi: 10.1088/1674-4926/30/4/045003
9	Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS Li Zehong, Wu Lijuan, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2008, 29(11): 2153-2157.
10	MOS Model 20 Based RF-SOI LDMOS Large-Signal Modeling Wang Huang, Sun Lingling, Yu Zhiping, Liu Jun Journal of Semiconductors, 2008, 29(10): 1922-1927.
11	Back-Gate Effect of SOI LDMOSFETs Bi Jinshun, Song Limei, Hai Chaohe, Han Zhengsheng Journal of Semiconductors, 2008, 29(11): 2148-2152.
12	RF-SOI Modeling:An Accuracy Body-Contact RF-LDMOSFET Large-Signal Model Liu Jun, Sun Lingling, Li Wenjun, Zhong Wenhua, Wu Yanming, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1786-1793.
13	Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials Yang Hui, Zhang Enxia, Zhang Zhengxuan Chinese Journal of Semiconductors , 2007, 28(3): 323-326.
14	Output Characteristics of a Buried n Layer RF Power PSOI LDMOS Wang Xiaosong, Li Zehong, Wang Yiming, Zhang Bo, Li Zhaoji, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1269-1273.
15	Optimization Design for Trench Drift Region Structure in RF Power LDMOS Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, et al. Chinese Journal of Semiconductors , 2006, 27(8): 1441-1446.
16	Research of the Critical Parameters of Power RF LDMOS Huang Xiaolan, Wu Dexin, Zhang Yaohui, Li Ke, Wang Lixin, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 266-270.
17	Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC Xiao Zhiqiang, Hong Genshen, Zhang Bo, Liu Zhongli Chinese Journal of Semiconductors , 2006, 27(10): 1750-1754.
18	Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications Li Wenjun, Cheng Xinhong, Song Zhaorui, Chen Zhanfei, Liu Jun, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 32-35.
19	SOI硅膜厚度对RESURF LDMOS参数的影响孙智林, 孙伟锋, 吴建辉 Chinese Journal of Semiconductors , 2005, 26(3): 536-540.
20	Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, et al. Chinese Journal of Semiconductors , 2005, 26(5): 862-866.

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Li Wenjun, Sun Lingling, Liu Jun. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Journal of Semiconductors, 2007, 28(4): 480-483.

Li W J, Sun L L, Liu J. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Chin. J. Semicond., 2007, 28(4): 480.