Chin. J. Semicond. > 1993, Volume 14 > Issue 11 > 702-707
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反应溅射TiW_yN_x薄膜扩散势垒特性研究

张国炳 , 武国英 , 徐立 , 郝一龙 , 隋小平 , A.P.Clarke , P.J.Clarke , M.D.Strathman , T.Gates and S.Baumann

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    Received: 20 August 2015 Revised: Online: Published: 01 November 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(11): 702-707
      张国炳, 武国英, 徐立, 郝一龙, 隋小平, A.P.Clarke, P.J.Clarke, M.D.Strathman, T.Gates, S.Baumann. 反应溅射TiW_yN_x薄膜扩散势垒特性研究[J]. 半导体学报(英文版), 1993, 14(11): 702-707.
      Citation:
      张国炳, 武国英, 徐立, 郝一龙, 隋小平, A.P.Clarke, P.J.Clarke, M.D.Strathman, T.Gates, S.Baumann. 反应溅射TiW_yN_x薄膜扩散势垒特性研究[J]. 半导体学报(英文版), 1993, 14(11): 702-707.
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      • Received Date: 2015-08-20

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