Chin. J. Semicond. > 1990, Volume 11 > Issue 10 > 773-779
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InGaAs/InGaAsP/InP SAGM-APD器件设计考虑及I_P—V曲线二级阶梯状扭折

丁国庆

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(10): 773-779
      丁国庆. InGaAs/InGaAsP/InP SAGM-APD器件设计考虑及I_P—V曲线二级阶梯状扭折[J]. 半导体学报(英文版), 1990, 11(10): 773-779.
      Citation:
      丁国庆. InGaAs/InGaAsP/InP SAGM-APD器件设计考虑及I_P—V曲线二级阶梯状扭折[J]. 半导体学报(英文版), 1990, 11(10): 773-779.
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      • Received Date: 2015-08-19

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