A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

J. Semicond. > 2008, Volume 29 > Issue 6 > 1044-1047

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A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

Gao Tongqiang, Zhang Chun, Chi Baoyong and Wang Zhihua

+ Author Affiliations

Abstract: Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process.The transmitter incorporates a class-E power amplifier (PA),a modulator,and a control logic unit.The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution.A novel structure is proposed to provide the modulation depth of 100% and 18%,respectively.The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%.

Key words: CMOS, power amplifier, RFID, transmitter, modulation depth

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谭辉, 陶明德, 韩英. CoMnNi氧化物非晶薄膜退火研究[J]. 半导体学报(英文版), 1989, 10(11): 865-870.

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Received: 18 August 2015 Revised: 14 January 2008 Online: Published: 01 June 2008

Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process.The transmitter incorporates a class-E power amplifier (PA),a modulator,and a control logic unit.The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution.A novel structure is proposed to provide the modulation depth of 100% and 18%,respectively.The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%.

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