Donor-Acceptor Luminescence in ZnO：LiCl/p-Si Films

Liu Cihui; Xu Xiaoqiu; Zhong Ze; Fu Zhuxi

Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 171-174

Donor-Acceptor Luminescence in ZnO：LiCl/p-Si Films

Liu Cihui, Xu Xiaoqiu, Zhong Ze and Fu Zhuxi

+ Author Affiliations

Abstract: The LiCi doped ZnO films on P.Si prepared by s01.gel were annealed at 600 ℃ and 900 ℃ in oxygen.The current-temperature (I-T) and deep level transient spectrum (DLTS) were measured in the temperature range of 77 and 325K.A stabledeep level center of E。=0.24eV in both of the samples was obtained by DLTS. The I-T figure shows that the Ec= 0.25eV deep level is related to the local state of crystal grain boundary. The PL spectrum at room temperature is of strong peak at deep level。while the peak in UV region is weak.As a result，the luminescent process should be the transition of electron from Zni to the Vzn in ZnO crystal grain.Annealed under oxygen atmospheres the intensity of deep level luminescent increased.

Key words: ZnO films, I-V characteristic, deep level

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Received: 27 May 2016 Revised: Online: Published: 01 January 2007

The LiCi doped ZnO films on P.Si prepared by s01.gel were annealed at 600 ℃ and 900 ℃ in oxygen.The current-temperature (I-T) and deep level transient spectrum (DLTS) were measured in the temperature range of 77 and 325K.A stabledeep level center of E。=0.24eV in both of the samples was obtained by DLTS. The I-T figure shows that the Ec= 0.25eV deep level is related to the local state of crystal grain boundary. The PL spectrum at room temperature is of strong peak at deep level。while the peak in UV region is weak.As a result，the luminescent process should be the transition of electron from Zni to the Vzn in ZnO crystal grain.Annealed under oxygen atmospheres the intensity of deep level luminescent increased.

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