Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 189-193
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多孔硅外延转移技术制备以氮化硅为绝缘埋层的SOI新结构

谢欣云 , 刘卫丽 , 门传玲 , 林青 , 沈勤我 and 林成鲁

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Key words: 氮化硅薄膜, SOI结构, 多孔硅外延转移

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 189-193
      谢欣云, 刘卫丽, 门传玲, 林青, 沈勤我, 林成鲁. 多孔硅外延转移技术制备以氮化硅为绝缘埋层的SOI新结构[J]. 半导体学报(英文版), 2003, 24(2): 189-193.
      Citation:
      谢欣云, 刘卫丽, 门传玲, 林青, 沈勤我, 林成鲁. 多孔硅外延转移技术制备以氮化硅为绝缘埋层的SOI新结构[J]. 半导体学报(英文版), 2003, 24(2): 189-193.
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      • Received Date: 2015-08-20

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