Chin. J. Semicond. > 1998, Volume 19 > Issue 10 > 736-739
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半导体GaN/MgAl2O4中缓冲层的透射电子显微分析

韩培德 , 杨海峰 , 张泽 , 段树坤 and 滕学公

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(10): 736-739
      韩培德, 杨海峰, 张泽, 段树坤, 滕学公. 半导体GaN/MgAl2O4中缓冲层的透射电子显微分析[J]. 半导体学报(英文版), 1998, 19(10): 736-739.
      Citation:
      韩培德, 杨海峰, 张泽, 段树坤, 滕学公. 半导体GaN/MgAl2O4中缓冲层的透射电子显微分析[J]. 半导体学报(英文版), 1998, 19(10): 736-739.
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      • Received Date: 2015-08-18

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