Citation: |
Qiu Mingxia, Ye Zhizhen, He Haiping, Gu Xiuquan, Zhu Liping. PLD Growth of P-Type ZnMgO Films with Li-Doped[J]. Journal of Semiconductors, 2007, 28(S1): 326-328.
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Qiu M X, Ye Z Z, He H P, Gu X Q, Zhu L P. PLD Growth of P-Type ZnMgO Films with Li-Doped[J]. Chin. J. Semicond., 2007, 28(S1): 326.
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PLD Growth of P-Type ZnMgO Films with Li-Doped
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Abstract
P-type ZnMgO films grown on glass substrates with Li-doped by pulsed laser deposition.The films have good crystallinity with a(0002)preferential orientation.The substrate temperature exert a remarkable influence oil electrical properties and crystal qualities of Li-doped films.Results indicated that Li-doped ZnMgO film possesses a best crystallinity at the substrate temperature of 500℃.The Li.doped p-type ZnMgO have the lowest resistivity of 6.58Ω·cm,and carrier density up to 5.1 x 10^18cm-3 and Hall mobility 0.189cm2/(V·s).In addition,the Li-doped P.type ZnMgO film has a high transmit. tance about 90%in the visible region and a band gap of 3.625eV at room temperature. -
References
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Proportional views