| Citation: |
Chen Zhitao, Xu Ke, Yang Zhijian, Su Yueyong, Pan Yaobo, Yang Xuelin, Zhang Han, Zhang Guoyi. Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films[J]. Journal of Semiconductors, 2006, 27(8): 1378-1381.
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Chen Z T, Xu K, Yang Z J, Su Y Y, Pan Y B, Yang X L, Zhang H, Zhang G Y. Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films[J]. Chin. J. Semicond., 2006, 27(8): 1378.
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Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films
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Abstract
High-resolution X-ray diffraction is utilized to analyze the micro-structure of annealed and as-grown GaN thin films grown by metalorganic chemical vapor deposition.Profile-fitting analyses indicate that the annealed ones have larger full widths at half maximum of (0002) rocking curve and lower densities of screw-type threading dislocations than the as-grown samples.A chemical etching experiment supports the above results.Our results indicate that profile-fitting is necessary when XRD is used to characterize the structure of GaN thin films. -
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