Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films

Chen Zhitao; Xu Ke; Yang Zhijian; Su Yueyong; Pan Yaobo; Yang Xuelin; Zhang Han; Zhang Guoyi

Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1378-1381

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Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films

Chen Zhitao, Xu Ke, Yang Zhijian, Su Yueyong, Pan Yaobo, Yang Xuelin, Zhang Han and Zhang Guoyi

State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100871,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100872,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100873,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100874,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100875,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100876,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100877,China
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,Research Center for Wide-band Semiconductors,School of Physics,Peking University,Beijing 100878,China

Abstract: High-resolution X-ray diffraction is utilized to analyze the micro-structure of annealed and as-grown GaN thin films grown by metalorganic chemical vapor deposition.Profile-fitting analyses indicate that the annealed ones have larger full widths at half maximum of (0002) rocking curve and lower densities of screw-type threading dislocations than the as-grown samples.A chemical etching experiment supports the above results.Our results indicate that profile-fitting is necessary when XRD is used to characterize the structure of GaN thin films.

Key words: high-resolution X-ray diffraction, rocking curve, threading dislocation

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Received: 20 August 2015 Revised: Online: Published: 01 August 2006

High-resolution X-ray diffraction is utilized to analyze the micro-structure of annealed and as-grown GaN thin films grown by metalorganic chemical vapor deposition.Profile-fitting analyses indicate that the annealed ones have larger full widths at half maximum of (0002) rocking curve and lower densities of screw-type threading dislocations than the as-grown samples.A chemical etching experiment supports the above results.Our results indicate that profile-fitting is necessary when XRD is used to characterize the structure of GaN thin films.

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