Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 888-891
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杂质不完全离化对SiC MOSFET的影响

尚也淳 , 张义门 and 张玉明

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Key words: SiC, 不完全电离, MOSFET, 电特性

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 888-891
      尚也淳, 张义门, 张玉明. 杂质不完全离化对SiC MOSFET的影响[J]. 半导体学报(英文版), 2001, 22(7): 888-891.
      Citation:
      尚也淳, 张义门, 张玉明. 杂质不完全离化对SiC MOSFET的影响[J]. 半导体学报(英文版), 2001, 22(7): 888-891.
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      • Received Date: 2015-08-20

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