Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1171-1175
|

CONTENTS

额外HCl和氮化对HVPE GaN生长的影响

修向前 , 张荣 , 李杰 , 卢佃清 , 毕朝霞 , 叶宇达 , 俞慧强 and 郑有炓

+ Author Affiliations

PDF

Key words: 氢化物气相外延(HVPE), GaN, 氮化, 额外HCl

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2196 Times PDF downloads: 888 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1171-1175
      修向前, 张荣, 李杰, 卢佃清, 毕朝霞, 叶宇达, 俞慧强, 郑有炓. 额外HCl和氮化对HVPE GaN生长的影响[J]. 半导体学报(英文版), 2003, 24(11): 1171-1175.
      Citation:
      修向前, 张荣, 李杰, 卢佃清, 毕朝霞, 叶宇达, 俞慧强, 郑有炓. 额外HCl和氮化对HVPE GaN生长的影响[J]. 半导体学报(英文版), 2003, 24(11): 1171-1175.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return