Chin. J. Semicond. > 1997, Volume 18 > Issue 8 > 603-608
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红外区熔再结晶SOI GE_XSi_(1-X)合金沟道P-MOSFET的研究

付军 , 栾洪发 , 田立林 , 钱佩信 and 周均铭

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(8): 603-608
      付军, 栾洪发, 田立林, 钱佩信, 周均铭. 红外区熔再结晶SOI GE_XSi_(1-X)合金沟道P-MOSFET的研究[J]. 半导体学报(英文版), 1997, 18(8): 603-608.
      Citation:
      付军, 栾洪发, 田立林, 钱佩信, 周均铭. 红外区熔再结晶SOI GE_XSi_(1-X)合金沟道P-MOSFET的研究[J]. 半导体学报(英文版), 1997, 18(8): 603-608.
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      • Received Date: 2015-08-19

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